Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch

Wu, Qilin; Zhao, Yili; Xun, Tao; Yang, Hanwu; Huang, Wei

doi:10.1109/led.2019.2918954

Cited by 30 publications

(11 citation statements)

References 11 publications

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“…A novel application in recent years for burst-mode lasers is high-power pulsed agile microwave generation. A few studies have reported on a pulsed laser illuminating a photoconductive semiconductor switch (PCSS) to generate a narrowband microwave that possesses the identical waveform of the laser pulses [ 14 – 16 ] . The frequency spectrum and peak power of the microwave depend on that of the laser pulse.…”

Section: Introductionmentioning

confidence: 99%

High-energy and high-peak-power GHz burst-mode all-fiber laser with a uniform envelope and tunable intra-burst pulses

Liu

Zhang

et al. 2023

High Pow Laser Sci Eng

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We report a Yb-doped all-fiber laser system generating burst-mode pulses with high energy and high peak power at a GHz intra-burst repetition rate. To acquire the uniform burst envelope, a double-pre-compensation structure with an arbitrary waveform laser diode driver and an acoustic optical modulator is utilized for the first time. The synchronous pumping is utilized for the system to reduce the burst repetition rate to 100 Hz and suppress the amplified spontaneous emission effect. By adjusting the gain of every stage, uniform envelopes with different output energies can be easily obtained. The intra-burst repetition rate can be tuned from 0.5 to 10 GHz actively modulated by an electro-optic modulator. Optimized by timing control of eight channels of analog signal and amplified by seven stages of Yb-doped fiber amplifier, the pulse energy achieves 13.3 mJ at 0.5 ns intra-burst pulse duration, and the maximum peak power reaches approximately 3.6 MW at 48 ps intra-burst pulse duration. To the best of our knowledge, for reported burst-mode all-fiber lasers, this is a record for output energy and peak power with nanosecond-level burst duration, and the widest tuning range of the intra-burst repetition rate. In particular, this flexibly tunable burst-mode laser system can be directly applied to generate high-power frequency-tunable microwaves.

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Section: Introductionmentioning

confidence: 99%

High-energy and high-peak-power GHz burst-mode all-fiber laser with a uniform envelope and tunable intra-burst pulses

Liu

Zhang

et al. 2023

High Pow Laser Sci Eng

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“…Prominently, another promising application is the generation of high power pulsed agile microwave by means of linear-mode photoconductive semiconductor switch devices (PCSS), where high value current could be generated with the similar temporal shapes of the incident burst-mode laser under a DC-biased voltage [12]. The absorbed laser energy could influence power of the generated signals and the material of PCSS has higher absorption efficiency of 532 nm than 1064 nm [13]. Intuitively, the repetition rates of intra-burst pulse determine frequency of the generated microwave, and the shapes of intra-burst alter the linewidth of the generated signals in frequency domain.…”

Section: Introductionmentioning

confidence: 99%

“…For this specific application, or even further pursuit of arbitrary spectrum waveform in frequency domain, the all-temporal-parameters tunability of intra-burst pulse is desired. Compared to the conventional microwave systems, the PCSS-based optical-to-electric RF or microwave generator have advantages of smart frequency agility and higher power capability [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

4 mJ Rectangular- Envelope GHz-Adjustable Burst-Mode Fiber-Bulk Hybrid Laser and Second-Harmonic Generation

Zhang

Guo

et al. 2021

IEEE Photonics J.

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“…The understanding of optical transitions mechanism is key for a variety of applications including photodetectors, [ 1,2 ] photovoltaics, [ 3,4 ] photoconductive semiconductor switches (PCSSs), [ 5–9 ] and quantum emitters. [ 10,11 ] Extrinsic excitation of defect levels with sub‐bandgap light is important when homogeneous photogeneration is required in bulk devices.…”

Section: Introductionmentioning

confidence: 99%

Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

Kramer

Voss

Conway

et al. 2020

Physica Status Solidi (a)

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Vanadium‐doped SiC is under study for high‐power photoconductive switches and is receiving increased attention as a potential material system for quantum computing, as the V can act as a quantum emitter at telecom wavelengths. Knowledge of the defect‐mediated electronic transition pathways from sub‐bandgap illumination in this material with low absorption and multi‐photon and multi‐path transition probability is important in optimizing quantum efficiency. Herein, the optical transitions of vanadium‐doped SiC for two polytypes as a function of dopant concentration using a total internal reflection (TIR) geometry are examined. Normalized quantum efficiency is reported and correlated with both dopant concentrations (V, N, B, and Al) measured by secondary ion mass spectroscopy (SIMS) and absorption measurements. Although both polytypes respond well to 532 nm light, efficiency at longer wavelengths does not correlate 1:1 with absorption coefficient and strongly depends on the polytype and net background co‐dopant concentration. This has important implications for efficient excitation of both carriers for optoelectronics and for the use of V as a quantum emitter.

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Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch

Cited by 30 publications

References 11 publications

High-energy and high-peak-power GHz burst-mode all-fiber laser with a uniform envelope and tunable intra-burst pulses

High-energy and high-peak-power GHz burst-mode all-fiber laser with a uniform envelope and tunable intra-burst pulses

4 mJ Rectangular- Envelope GHz-Adjustable Burst-Mode Fiber-Bulk Hybrid Laser and Second-Harmonic Generation

Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

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