Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs

Ивонин, И. В.; Lavrent'eva, L. G.; Lukash, V. S.; Subach, S. V.; Chernikov, Е. V.; Tarzimyanov, A. N.

doi:10.1007/bf02437023

Cited by 1 publication

(2 citation statements)

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“…We restrict ourselves to the simple model assuming simultaneous existence of the regions of GaAs substrate and InP film surfaces. This assumption is in good agreement with the experimental data [5][6][7][8], growth centers do form at the initial growth stages. However, no account is taken of the fact that the growth centers have variable compositions.…”

Section: Calculational Techniquesupporting

confidence: 85%

“…4b, c), and the composition is shifted to P. Thus, as the substrate is overgrown, the composition of film growing from such an adsorption layer will change in a nonpseudobinary way. Taking into account the calculation results, we can expect that an intermediate layer of variable composition will be formed at the heterostructure interface (and this is really the case [5][6][7][8]). The characteristic size of this intermediate layer is determined by the time t 0 of formation of a continuous heteroepitaxial film and by the ratio between the normal and lateral growth rates of the nucleation centers.…”

Section: Adsorption Layer Composition Versus Free-substrate Surface Fmentioning

confidence: 99%

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The role of the adsortption layer in the formation of phase inhomogeneity at the InP/GaAs interface

Ивонин

Subach

2006

Russ Phys J

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The composition of the adsorption layer formed on the GaAs (001) surface at the initial stages of heteroepitaxial growth of InP in a chloride vapor-transport system is calculated within a thermodynamic approach. The obtained results allow us to understand the reasons for formation of a thin GaInAsP layer of variable composition experimentally observed at the InP/GaAs interface.Heteroepitaxial A 3 B 5 /A 3 B 5 layers find wide application in modern micro-and optoelectronics, (e.g., in fabrication of fast-operating emission sources and radiation detectors [1-4]). In our earlier studies [5-8] of the initial growth stages and the properties of heteroepitaxial (001)InP/GaAs layers grown by chloride vapor phase epitaxy (VPE), we found that a thin (< 100 nm) InGaAsP intermediate layer of variable composition is spontaneously formed at the hetero-interface. An analysis of the experimental data shows that this layer results from gas etching of the GaAs substrate at the initial stage at the places, where growth centers are formed. Therefore, the components of the substrate (Ga, As) are involved in the formation of growth centers along with those of the deposited layer (In, P).In this work, we assess the composition of the adsorption layer formed on the (001) GaAs surface at the initial stages of InP heteroepitaxy in the VPE system to test the foregoing conclusion. The possibility of local gas etching of the substrate was taken into account. The calculations were made within the thermodynamic model adopted in [9, 10]. In the calculations, the growth temperature (873-1073 К) and the input pressure of phosphorus trichloride PCl 3 (100-10000 Pа) were used as variables.

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Section: Calculational Techniquesupporting

confidence: 85%

Section: Adsorption Layer Composition Versus Free-substrate Surface Fmentioning

confidence: 99%

The role of the adsortption layer in the formation of phase inhomogeneity at the InP/GaAs interface

Ивонин

Subach

2006

Russ Phys J

Self Cite

View full text Add to dashboard Cite

show abstract

Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs

Cited by 1 publication

References 8 publications

The role of the adsortption layer in the formation of phase inhomogeneity at the InP/GaAs interface

The role of the adsortption layer in the formation of phase inhomogeneity at the InP/GaAs interface

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