“…The cubic phase of SiC (3C-SiC) has been extensively investigated in the last few years as an alternative candidate to wurtzite GaN for power devices in the medium range of 600-1200 V. 1 In addition to the good mobility of carriers, cubic SiC grows on cheap Si (001) or Si (111) substrates, which is surely advantageous with respect to the homoepitaxial growth of the hexagonal 4H-SiC on expensive substrates. 2,3 However, the presence of multiple stacking faults (SFs) and anti-phase boundaries (APBs) is still hindering the realization of efficient power devices. 4,5,6 In particular, SFs are present at the surface of a film, as thick as some tens of µm, at a linear density of several 10 3 cm -1 : despite that the leakage of current in reverse bias appears to be larger in the case of APBs, 7 such a density is still one order of magnitude larger than that required for device manufacturing.…”