Initial detection of potential-induced degradation using dark I–V characteristics of crystalline silicon photovoltaic modules in the outdoors

Oh, Wonwook; Bae, Soo Hyun; Kim, Dong Hwan; Park, Nochang

doi:10.1016/j.microrel.2018.06.093

Cited by 9 publications

(8 citation statements)

References 6 publications

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“…Ao nível da célula, o revestimento antirreflexo desempenha um papel essencial na sensibilidade PID. Ajustando a condutividade dessa camada durante o processo de produção, a célula solar se torna menos suscetível ao PID (Carolus et al, 2019;Hoffmann;Koehl, 2014;Luo et al, 2018;Naumann et al, 2013Naumann et al, , 2014Oh et al, 2018). Foi demonstrado em várias publicações que aumentar o índice de refração melhora de forma eficiente a resistência das células solares contra os PID-s (Bora et al, 2021;Kwembur et al, 2020;Naumann et al, 2012).…”

Section: Tratamento E Mitigação Contra Pid Em Módulos Fvunclassified

“…Foi demonstrado em várias publicações que aumentar o índice de refração melhora de forma eficiente a resistência das células solares contra os PID-s (Bora et al, 2021;Kwembur et al, 2020;Naumann et al, 2012). Levando a uma diminuição da suscetibilidade de PID no nível da célula por meio da neutralização do avanço de íons de Na+ e redução do campo elétrico para deriva de Na+ na camada de SiNx (Carolus et al, 2019;Hara;Jonai;Masuda, 2015;Oh et al, 2018;Wei Luo et al, 2017b). Descobriu-se que a espessura do revestimento SiNx e sua tecnologia de deposição têm algumas influências na resistência PID da célula solar (Nguyen et al, 2020).…”

Section: Tratamento E Mitigação Contra Pid Em Módulos Fvunclassified

“…Quando analisado em campo o PID resulta em grandes riscos técnicos e perdas financeiras para os proprietários de plantas fotovoltaicos. A análise do PID em campo gera dificuldade, já que a maioria dos estudos e testes são realizados em laboratório, havendo a necessidade de métodos eficientes de diagnóstico de PID em usinas fotovoltaicas ao ar livre (Oh et al, 2018)Além disso, a compreensão e mitigação do PID recebem atenção e importância cada vez maiores, devido ao aumento consistente das tensões operacionais em usinas fotovoltaicas (Carolus et al, 2019). Devido à variedade de topologias existentes, os inversores devem possuir equipamentos adicionais que permitam disponibilizar um funcionamento ideal para cada tecnologia de módulos.…”

Section: Introductionunclassified

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Degradação Induzida Por Potencial (Pid) Em Módulos Fotovoltaicos

2022

Anais Congresso Brasileiro De Energia Solar - CBENS

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Os módulos fotovoltaicos (FV) em usinas de energia devem suportar altas tensões de polarização entre as camadas que compõem os módulos e a estrutura de montagem em que se encontram os módulos. Assim, esta alta tensão tem aumentado a degradação de módulos em campo prejudicando o desempenho do módulo fotovoltaico, ocasionando um grande problema para a indústria fotovoltaica. Este estresse de alta tensão resulta na degradação induzida por potencial (PIDpotencial induced degradation). Neste artigo será fornecida uma revisão da literatura, tendo como objetivo fornecer uma visão geral das pesquisas que foram realizadas para a compreensão do PID e a situação atual da pesquisa sobre o tema para módulos FV de silício cristalino. Este artigo consiste em três partes. Na primeira parte, são discutidas as possíveis causas do PID e o mecanismo de como essa degradação atua nos módulos de silício cristalino (c-Si), examinando como a temperatura, umidade e tensão estão correlacionadas no avanço do PID. Na segunda parte são abordados os testes usados atualmente para a avaliar a durabilidade de módulos FV para PID. Na terceira parte são apresentadas medidas preventivas contra PID a nível de célula, módulo e sistema.

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Section: Tratamento E Mitigação Contra Pid Em Módulos Fvunclassified

Section: Introductionunclassified

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Degradação Induzida Por Potencial (Pid) Em Módulos Fotovoltaicos

2022

Anais Congresso Brasileiro De Energia Solar - CBENS

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“…A PV station's output power loss can be up to 30% when severe PID affects it [68]. The PID mode of c-Si PV modules in the field was first introduced in 2010 [69] and especially for P-type PV modules that gained much attention [70]. Through the encapsulation and front glass, PID leads to high paths of leakage between the cells and the ground [71].…”

Section: Delamination Associated With Pidmentioning

confidence: 99%

Delamination-and Electromigration-Related Failures in Solar Panels—A Review

et al. 2021

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The reliability of photovoltaic (PV) modules operating under various weather conditions attracts the manufacturer’s concern since several studies reveal a degradation rate higher than 0.8% per year for the silicon-based technology and reached up to 2.76% per year in a harsh climate. The lifetime of the PV modules is decreased because of numerous degradation modes. Electromigration and delamination are two failure modes that play a significant role in PV modules’ output power losses. The correlations of these two phenomena are not sufficiently explained and understood like other failures such as corrosion and potential-induced degradation. Therefore, in this review, we attempt to elaborate on the correlation and the influence of delamination and electromigration on PV module components such as metallization and organic materials to ensure the reliability of the PV modules. Moreover, the effects, causes, and the sites that tend to face these failures, particularly the silicon solar cells, are explained in detail. Elsewhere, the factors of aging vary as the temperature and humidity change from one country to another. Hence, accelerated tests and the standards used to perform the aging test for PV modules have been covered in this review.

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“…These highly advanced Si cells are fabricated on n-type c-Si substrates, which offer the advantages of excellent carrier lifetime and resistance to potential-induced degradation (PID). [86][87][88][89][90] Although HIT cells exhibit high V oc and efficiency due to the high-quality passivation properties of the i-a-Si:H layer, they suffer from a process temperature limit of 250 °C, above which a dramatic efficiency decrease is observed. Thus, solar cell designs allowing for hightemperature firing metallization that needs no TCO layer for the front metal contact have been extensively researched in a singlejunction Si cell.…”

Section: New Advanced Si Cellsmentioning

confidence: 99%

Recent Progress in Interconnection Layer for Hybrid Photovoltaic Tandems

Park

Lee

et al. 2020

Advanced Materials

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larger acceptance owing to their decreasing cost. However, Si cells feature power conversion efficiencies (PCEs) close to the maximum practically achievable value (29.4% for crystalline Si solar cells), which makes it difficult to further reduce the levelized cost of electricity by decreasing the power output-to-cost ratio. [7,8] The most straightforward solution to this problem is to hybridize multiple semiconductor layers in a tandem architecture for absorbing the different wavelengths of the solar spectrum using different solar cell technologies. [9-12] As proven by a theoretical tandem cell efficiency of ≈46%, [13] Si solar cells with a bandgap of 1.1 eV have been regarded as potential bottom subcells of hybrid tandems, additionally offering the benefits of mass production suitability owing to well-organized production lines and global supply chains. [13,14] However, Sibased hybrid tandem solar cells configured with cost-effective solar cell technologies, including dye-sensitized solar cell (DSSC) and organic photovoltaics (OPV), have far lower efficiencies than single-junction Si solar cells, predominantly because of the insufficient compatibility of the employed materials with Si solar cells. [15-19] Metal halide perovskite-based solar cells have attracted significant attention in recent years because of their potential to be processed at low cost, high efficiencies, excellent optoelectronic properties, and tunable bandgap. They have therefore considered as prospective components of hybrid tandems. [20] Previous studies on the fundamental working principle of the hydrogenated amorphous Si (a-Si:H)/a-Si:H tandem and related validation by empirical investigations show the feasibility of combining different solar cell technologies, [6,21-23] as exemplified by the pairing of high-bandgap perovskite subcells with low-bandgap Si subcells or the assembly of dual perovskitebased tandem solar cells exploiting perovskite bandgap tunability. [14,24-26] To date, considerable effort has been directed at the development of wide-bandgap perovskite solar cells (PSCs) (1.65-1.8 eV) for hybrid tandem applications, [27,28] and remarkable progress (i.e., a high open-circuit voltage (V oc) of 1.31 V with a wide bandgap of 1.72 eV (>90% of the Shockley-Queisser limit)) has been achieved. [29] Currently, researchers aim to realize perovskite-based hybrid tandem solar cells with PCEs of 30%. Nonetheless, considerable electrical property and fabrication process adjustments are required to integrate singlejunction perovskites into the hybrid tandem architecture. The introduction of an intermediate layer to bridge different solar Hybrid tandem solar cells offer the benefits of low cost and full solar spectrum utilization. Among the hybrid tandem structures explored to date, the most popular ones have four (simple stacking design) or two (terminal/tunneling layer addition design) terminal electrodes. Although the latter design is more cost-effective than the former, its widespread application is hindered by the difficulty of preparing...

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Initial detection of potential-induced degradation using dark I–V characteristics of crystalline silicon photovoltaic modules in the outdoors

Cited by 9 publications

References 6 publications

Degradação Induzida Por Potencial (Pid) Em Módulos Fotovoltaicos

Degradação Induzida Por Potencial (Pid) Em Módulos Fotovoltaicos

Delamination-and Electromigration-Related Failures in Solar Panels—A Review

Recent Progress in Interconnection Layer for Hybrid Photovoltaic Tandems

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