Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Kishida, Reiji; Oshima, Akira; Yabuuchi, Michitarou; Kobayashi, Kazutoshi

doi:10.7567/jjap.54.04dc19

Cited by 2 publications

(4 citation statements)

References 32 publications

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“…In our previous measurement circuits, antennas are directly connected to wires inside ROs. 1,28) This measurement circuit cannot separate PID effects between PMOS and NMOS. Moreover, it is difficult to convert frequency fluctuation to V th because each MOSFET suffers from degradations independently.…”

Section: Measurement Circuitsmentioning

confidence: 99%

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Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

Kishida

Furuta

Kobayashi

2018

Jpn. J. Appl. Phys.

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Plasma-induced damage (PID) and bias temperature instability (BTI) are inevitable reliability issues that degrade the performance of transistors. In this study, PID and BTI, depending on the type of antenna layer, are evaluated in current-starved ring oscillators (ROs) to separate degradations in PMOS and NMOS transistors in a 65 nm silicon-on-insulator (SOI) process. Oscillation frequencies of ROs fluctuate with the performance of MOSFET switches between power/ground rails and virtual power/ground nodes. The initial frequencies of ROs with PMOS switches having antennas on upper layers decrease. However, those with NMOS switches become higher than those without PID because high-k dielectrics are damaged by positive charges. The degradation induced by negative BTI (NBTI) in PMOS is 1.5 times larger than that induced by positive BTI (PBTI) in NMOS. However, both NBTI-and PBTI-induced degradations are the same among different antenna layers. The frequency fluctuation caused by PID is converted to threshold voltage shifts by circuit simulations.

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Section: Measurement Circuitsmentioning

confidence: 99%

“…Plasma-induced damage (PID) is caused by charge during metallization. [1][2][3][4][5][6] Charge is induced in metal wires during back-end-of-line (BEOL) interlayer dielectric processes. Charged metal wires are called antennas.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

Kishida

Furuta

Kobayashi

2018

Jpn. J. Appl. Phys.

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“…We fabricated a chip including 11-stage ROs in a 65 nm process. In previous measurement circuits, antennas are connected directly on wires inside ROs [1,5]. However, it cannot separate PID effects between PMOS and NMOS.…”

Section: Measurement Circuitsmentioning

confidence: 99%

“…Plasma induced damage (PID) is caused by charge during metallization process [1]. It shifts threshold voltage (V th ) and oscillation frequency.…”

Section: Introductionmentioning

confidence: 99%

Plasma Induced Damage Depending on Antenna Layers in Ring Oscillators

Kishida¹,

Furuta²,

Kobayashi³

2017

Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials

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Plasma Induced Damage (PID) is an inevitable reliability issue in VLSI. In this paper, PID depending on different antenna layers is evaluated. Ring Oscillators (ROs) are fabricated in a 65 nm process and oscillation frequencies are measured. The frequencies of ROs are controlled by MOSFET switches between power (ground) rails and virtual power (ground) nodes. Initial frequencies of ROs with PMOS switches are slower in upper layers. However, those with NMOS switches are faster than those without PID because high-k dielectrics are damaged by positive charge. V th is shifted by more than 7.7% and 11% due to PID in PMOS and NMOS respectively.

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Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

Cited by 2 publications

References 32 publications

Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators

Plasma Induced Damage Depending on Antenna Layers in Ring Oscillators

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