Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells

Kisin, Mikhail V.; El-Ghoroury, Hussein S.

doi:10.1007/s10825-015-0673-5

Cited by 14 publications

(7 citation statements)

References 36 publications

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“…In contrast, the EQE dependence of green LEDs frequently becomes asymmetric with a more extended low-current wing [ 9 ]. To explain that behavior, various mechanisms have been invoked: electron leakage into p-side of the LED structure [ 10 ]; delocalization of carriers captured by InGaN composition fluctuations [ 11 ]; imbalance between the electron and hole injection into InGaN QWs caused by non-equilibrium QW population [ 12 ], and suppression of non-radiative recombination at threading dislocations via carrier localization by composition fluctuations in InGaN alloys [ 13 ]. In addition, the contribution of device self-heating at high current was not reliably excluded in many experimental studies.…”

Section: Introductionmentioning

confidence: 99%

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

Titkov

Karpov²,

Yadav

et al. 2017

Materials

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External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs.

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Section: Introductionmentioning

confidence: 99%

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

Titkov

Karpov²,

Yadav

et al. 2017

Materials

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“…LED layout also includes an external p + -doped 20 nm Al0.15Ga0.85N electron blocking layer (EBL) located on the p-side of the active region. Modeling shows, however, that the external EBL, while suppressing the electron leakage, can hardly affect the uniformity of MQW-carrier distribution across the active region at LED operational currents, and therefore, provides little impact on relative QW injection [3]. QW radiative characteristics used in our example simulations are listed in Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…In III-nitride based LED structures, inferior hole transport is the commonly accepted source of inhomogeneous injection [2]. The excessive depth of InGaN quantum wells employed in visible-range light emitters and related increases in quantum well (QW) population capacity, however, are equally important causes of injection non-uniformity [3].…”

Section: Introductionmentioning

confidence: 99%

III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection

2019

Self Cite

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Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’s active region to match the application-driven device injection characteristics. This approach has been successfully applied to control the color characteristics of monolithic multi-color light-emitting diodes (LEDs). We further exemplify the method’s versatility by demonstrating the IBL design of III-nitride multiple-quantum-well (MQW) light-emitting diode with active quantum wells uniformly populated at LED operational current.

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“…1D simulations.-There are several 1D LED simulations tools such as Silense, 137 Tibercad, 138 Comsol, 139 Crosslight. 140 However, these tools, when used with standard parameters such as energy band discontinuities and spontaneous polarization values and piezoelectric coefficients, fail in describing the blue LED forward voltage, yielding 3.4 V or more, while observed values are well below 3 V, quite smaller than the built-in junction voltage, about 3.2 V, and related to the photon energy by eV turn-on ≈ hν.…”

Section: Methodsmentioning

confidence: 99%

Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future

Weisbuch

2020

ECS J. Solid State Sci. Technol.

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The emergence of efficient solid state light emitters was the result of the remarkable breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting diodes. Over the past two decades, the continued progress in blue LED efficiency resulted in a revolution in lighting. While the basic physics of nitrides LEDs operation are well understood, nitride LEDs have still open questions, and their reaching physical limits at all wavelengths still raises major challenges.

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Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells

Cited by 14 publications

References 36 publications

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection

Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future

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