Inhomogeneity Contribution to the Electrical Properties of Y‐Doped CeO2 Ceramics: Comparison of A‐C and D‐C Measurements

Abstract

Ge INCORPORATION IN GaAs 2113corporation of Ge in GaAs is governed by the allowable Ga and As vacancies. These quantities are calculated using equilibrium thermod:/namics, the values of the equilibrium constants involved being those found in the literature. The theoretical results presented offer an explanation of all the trends experimentally observed. The quantitative agreement obtained can also be judged reasonable, taking into account the uncertainty in some of the numerical values cited. Ge appears to be a valuable probe for the study of stoichiometry variations in MBE material, and the more general conclusion of this study is that, as far as native defects are concerned, the situation during molecular beam epitaxy does not deviate significantly from equilibrium. Note added in proof.--During the review of this paper, results concerning MBE GaAs Si doping were published [Y. G. Chai, R. Chow, and C. E. L. Wood, . Phys. Lett., 39, 800 (1981)]. The experimental results reported on the effect of growth conditions on free carrier concentration are in agreement with the theoretical prevision made here on a thermodynamic basis (see Fig. 6). Appl

Searching for correlations in simultaneous X-ray and UV emission in the narrow-line Seyfert 1 galaxy 1H 0707–495

“…XRI and XRB). Such behaviour was seen in the flux-resolved spectral analysis of a very similar NLS1 IRAS 13224-3809 (Chiang et al 2015).…”

Materials for fuel cells

“…Charles [25] used Specimens were cut from the billet for electrical studies, to be reported on elsewhere [31], and for examination by optical microscopy, SEM and x-ray diffraction. Densities of the polished specimens were obtained from mass and size measurements.…”