1999
DOI: 10.1016/s0038-1101(99)00086-6
|View full text |Cite
|
Sign up to set email alerts
|

InGaP HBT technology for RF and microwave instrumentation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2003
2003
2015
2015

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 17 publications
(2 citation statements)
references
References 6 publications
0
2
0
Order By: Relevance
“…Carbon is the preferred dopant in heavily p-type III-V base layers (∼4 × 10 19 cm −3 ) because of its low diffusivity [1]. Even higher levels of reliability and improved performance in GaAs-based HBTs can be achieved by replacing AlGaAs with larger energy-gap InGaP as the emitter material [2,3].…”
Section: Introduction: Band-gap Engineering the Hbt Base Layermentioning
confidence: 99%
“…Carbon is the preferred dopant in heavily p-type III-V base layers (∼4 × 10 19 cm −3 ) because of its low diffusivity [1]. Even higher levels of reliability and improved performance in GaAs-based HBTs can be achieved by replacing AlGaAs with larger energy-gap InGaP as the emitter material [2,3].…”
Section: Introduction: Band-gap Engineering the Hbt Base Layermentioning
confidence: 99%
“…The GaAs/AlGaAs and InP/InGaAsP heterostructures are the basis of most modern compound semiconductor electronic and photonic devices. [1][2][3][4][5] In particular, devices such as high electron mobility transistors ͑HEMTs͒ and heterojunction bipolar transistors ͑HBTs͒ rely on the ability to selectively etch one component of the heterostructure over the other in applications such as microwave power amplifiers and low noise amplifiers. Further requirements for this etching are vertical sidewalls and minimal surface disruption.…”
mentioning
confidence: 99%