2018
DOI: 10.1109/lpt.2017.2782773
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InGaP/AlGaInP Quantum Well Discrete Mode Laser Diode Emitting at 689 nm

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Cited by 9 publications
(8 citation statements)
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“…Single wavelength operation in DM laser diodes is achieved by introducing index perturbations in the form of shallow-etched features, or slots, positioned at a number of sites distributed along the ridge waveguide as shown in Figure 16a [27][28][29][30][31][32]. The slots are realized using ICP dry etching, with a typical depth in the region of 1.5-2 μm and a width of $1 μm.…”
Section: Design Of Dm Laser Diodesmentioning
confidence: 99%
“…Single wavelength operation in DM laser diodes is achieved by introducing index perturbations in the form of shallow-etched features, or slots, positioned at a number of sites distributed along the ridge waveguide as shown in Figure 16a [27][28][29][30][31][32]. The slots are realized using ICP dry etching, with a typical depth in the region of 1.5-2 μm and a width of $1 μm.…”
Section: Design Of Dm Laser Diodesmentioning
confidence: 99%
“…The laser line width is less than 250 kHz, the SMRR is ∼40 dB, and the output power is about 4 mW. In 2018, the company [40] also reported a monolithic integrated single-mode red laser diode; for the diode, the laser wavelength is 689 nm, the laser power is 10 mW, the SMRR is 40 dB, the spectral line width is 2 MHz, and the mode-hopping-free output is guaranteed in the range of 0-50.…”
Section: Coupled Cavity Semiconductor Lasermentioning
confidence: 99%
“…在此基础上, 爱尔兰布拉纳光电公司和都柏 林城市大学 (Dublin City University) [39] 联合研制出一种宽工作温区的分离模式半导体激光器, 实现 在 0 • C < T < 85 • C 温度范围内保持单纵模工作, 激光线宽 < 250 kHz, SMSR 达 40 dB, 输出功率约 4 mW. 2018 年, 该公司 [40] 又报道了一种单片集成单模红光半导体激光器, 采用分离模式结构实现激 光波长 689 nm, 激光功率 10 mW, SMSR…”
Section: 表面光栅分布反馈半导体激光器unclassified