InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Egawa, Takashi; Zhang, B.; Nishikawa, N.; Ishikawa, Hiroyasu; Jimbo, Takashi; Umeno, Masayoshi

doi:10.1063/1.1408264

Cited by 61 publications

(40 citation statements)

References 11 publications

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“…The same group recently presented a crack-free LED structure based on such a buffer layer with 20 mW at 20 mA which is relatively bright when compared to other LEDs on Si [56].…”

Section: Introductionmentioning

confidence: 99%

GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

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Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide substrates. These are either insulating or very expensive and not available in large diameter. A well‐conducting low‐cost alternative is silicon also enabling the integration of optoelectronics or high‐power electronics with Si‐based electronics. The main problem limiting a fast progress of GaN growth on silicon is the thermal mismatch of GaN and Si leading to cracks even below device‐relevant layer thicknesses. In the last few years, since the first demonstration of a molecular beam epitaxy grown GaN‐based light emitting diode on Si in 1998 the activities in research of GaN on Si increased dramatically. Meanwhile, several concepts to lower stress, avoid cracks, and improve the material quality exist. Meanwhile the material quality has improved significantly and is about as good as on sapphire so that it is only a question of time until GaN‐based devices on Si come into market. This article gives a review on the latest developments in group‐III nitride growth on Si by metal organic vapor phase epitaxy.

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“…The same group recently presented a crack-free LED structure based on such a buffer layer with 20 mW at 20 mA which is relatively bright when compared to other LEDs on Si [56].…”

Section: Introductionmentioning

confidence: 99%

GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

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“…Bottom right: intensity profiles for the n-GaN, p-GaN, and InGaN luminescence compared to samples grown on silicon, and even comparable to samples grown on sapphire by other groups [10,11,[20][21][22][23]. Optimizing the diode shape to improve the light outcoupling is likely to reduce losses and enhance the LED efficiency significantly.…”

Section: Resultsmentioning

confidence: 91%

Bright, Crack-Free InGaN/GaN Light Emitters on Si(111)

Dadgar

Poschenrieder

Contreras

et al. 2002

phys. stat. sol. (a)

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Crack-free, up to 2.8 mm thick GaN-based light emitting diodes were grown by metalorganic chemical vapor deposition on 2-inch Si(111) substrates. Elimination of cracks was achieved by using two $12 nm thick low-temperature AlN : Si interlayers for stress reduction. A significant enhancement in optical output power was obtained by an in situ insertion of a Si x N y mask. Transmission electron microscopy measurements showed a tenfold reduction in dislocation density to $10 9 cm --2 by the low-temperature AlN and Si x N y interlayers, resulting in a significant increase in luminescence intensity. Vertically contacted diodes showed a light output power of 152 mW at a current of 20 mA and a wavelength of 455 nm. Turn-on voltages around 2.8 V and series resistances of 55 W were obtained.

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“…However, even when Al-rich buffer layers are used a significant reduction of the series resistance from values well above 200 Ω to values even below 100 Ω can be obtained. For example an LED with a relatively high output power of 20 µW at 20 mA and a series resistance around 100 Ω was reported by Egawa et al [31]. Lifetime testing of these LEDs over 500 hours showed no degradation.…”

Section: Figmentioning

confidence: 89%

Gallium‐nitride‐based devices on silicon

Dadgar

Poschenrieder

Daumiller

et al. 2003

phys. stat. sol. (c)

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GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crackfree, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz.

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InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Cited by 61 publications

References 11 publications

GaN-Based Devices on Si

GaN-Based Devices on Si

Bright, Crack-Free InGaN/GaN Light Emitters on Si(111)

Gallium‐nitride‐based devices on silicon

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