2013 IEEE Photonics Conference 2013
DOI: 10.1109/ipcon.2013.6656491
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InGaN micro-LED-pillar as the building block for high brightness emitters

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Cited by 8 publications
(4 citation statements)
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References 7 publications
(6 reference statements)
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“…51,52) Though the micro-pixel LEDs (µLEDs) have shown enhanced modulation characteristics compared to the conventional LEDs, their output powers are relatively low, making it less attractive for high brightness applications. 13,53) Therefore, the InGaN-based laser diode became a competitive light emitter for both indoor and outdoor VLC systems.…”
Section: Progress In Laser Based White Light Communicationsmentioning
confidence: 99%
See 1 more Smart Citation
“…51,52) Though the micro-pixel LEDs (µLEDs) have shown enhanced modulation characteristics compared to the conventional LEDs, their output powers are relatively low, making it less attractive for high brightness applications. 13,53) Therefore, the InGaN-based laser diode became a competitive light emitter for both indoor and outdoor VLC systems.…”
Section: Progress In Laser Based White Light Communicationsmentioning
confidence: 99%
“…Group-III nitride light-emitters, such as LEDs and LDs, have been demonstrated and studied for SSL and VLC applications. 53,55,73) However, the performance of LED-based SSL-VLC system is limited by "efficiency droop" and <100 MHz 3-dB bandwidth. InGaN-based LDs were recently studied for "efficiency-droop-free", high-speed light-emitter.…”
Section: Optical Light Sourcesmentioning
confidence: 99%
“…Further investigations show that both GaN-based edge emitting laser diodes (EELDs) and vertical-cavity surface-emitting lasers (VCSELs) exhibit beyond GHz modulation bandwidth [21,22]. Though the micro-pixel LEDs have shown enhanced modulation characteristics compared to the broad-area counterparts, their output powers are relatively low, making it less attractive for high brightness applications [23,24]. Therefore, the GaN laser-based VLC will play an important part in free space optical communications.To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as IIInitride LDs, transverse-transmission modulators, and planar photodetectors [25,26].…”
mentioning
confidence: 99%
“…InGaN/GaN quantum well (QW) based optoelectronic devices are essential for light generation, transmission, modulation, and detection in the violet-blue-green color regime [1][2][3][4][5][6]. Recently, III-nitride laser diodes (LDs) have shown advantages as a viable high-power light source for a number of important applications, such as smart lighting, optical storage, free-space visible light communication, underwater wireless optical communication, and internet of things [1,[7][8][9].…”
mentioning
confidence: 99%