InGaN/GaN nanoLED Arrays as a Novel Illumination Source for Biomedical Imaging and Sensing Applications

Gülink, Jan; Bornemann, Steffen; Spende, Hendrik; Maur, Matthias Auf der; Carlo, Aldo Di; Prades, Joan Daniel; Wasisto, Hutomo Suryo; Waag, A.

doi:10.3390/proceedings2130892

Cited by 9 publications

(12 citation statements)

References 6 publications

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“…The final chip size was 7.1 × 8.5 mm with 64 p-pads and 4 n-pads located on the chip’s sides, at a distance of 6 mm. The fabrication process was the same as that of Led1, but using electron beam lithography (EBL) instead of photolithography, which was necessary to achieve submicron LED structures as detailed in [ 21 ].…”

Section: Methodsmentioning

confidence: 99%

A Novel Approach for a Chip-Sized Scanning Optical Microscope

et al. 2021

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The recent advances in chip-size microscopy based on optical scanning with spatially resolved nano-illumination light sources are presented. This new straightforward technique takes advantage of the currently achieved miniaturization of LEDs in fully addressable arrays. These nano-LEDs are used to scan the sample with a resolution comparable to the LED sizes, giving rise to chip-sized scanning optical microscopes without mechanical parts or optical accessories. The operation principle and the potential of this new kind of microscope are analyzed through three different implementations of decreasing LED dimensions from 20 µm down to 200 nm.

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Section: Methodsmentioning

confidence: 99%

A Novel Approach for a Chip-Sized Scanning Optical Microscope

et al. 2021

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“…In contrast, the first approach would require deep etching and planarization of the high-aspect ratio structures, since the lateral dimensions target 200 nm and the overall thickness of the GaN thin film structure on top of the isolating sapphire substrate is approximately 5 μm. Under such conditions, controlled etching and refilling on a submicrometer scale is difficult to achieve 17 . Therefore, a metal-oxide-GaN (MOGaN) process is developed for fabrication of nanoLED arrays.…”

Section: Process Descriptionmentioning

confidence: 99%

Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization

et al. 2020

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The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.

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“…ITO Si 3 N 4 SU-8 water 2.99 5.8254 3.87 4.14 2.544 1.77 0 0 0.023 2.5•10 −6 0 0 addressing technology described elsewhere [23]. Actually, we are comparing here two possible designs of the array.…”

Section: Materials Sapphire Ganmentioning

confidence: 99%

Optical design of InGaN/GaN nanoLED arrays on a chip: toward: highly resolved illumination

et al. 2020

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The physical laws of diffraction limit the spatial resolution of optical systems. In contrary to most superresolution microscopy approaches used today, in our novel idea we are aiming to overcome this limit by developing a spatially resolved illumination source based on semiconductor nanoscale Light Emitting Diode (nanoLED) arrays with individual pixel control. We present and discuss the results of optical simulations performed for such nanoLED emitter arrays and analyze the theoretical limits of this approach. As possible designs we study arrays of GaN nanofins and nanorods (obtained by etching nanofin arrays), with InGaN/GaN multi quantum wells embedded as active regions. We find that a suitable choice of the array dimensions leads to a reasonably directed light output and concentration of the optical power in the near field around an activated pixel. As a consequence, the spatial resolution for this type of microscopy should only be limited by the pixel pitch, and no longer by the optical diffraction. Realization of optimized nanoLED arrays has a potential to open new field of chip based superresolution microscopy, making super-high spatial resolution ubiquitously available.

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InGaN/GaN nanoLED Arrays as a Novel Illumination Source for Biomedical Imaging and Sensing Applications

Cited by 9 publications

References 6 publications

A Novel Approach for a Chip-Sized Scanning Optical Microscope

A Novel Approach for a Chip-Sized Scanning Optical Microscope

Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization

Optical design of InGaN/GaN nanoLED arrays on a chip: toward: highly resolved illumination

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