InGaN/GaN multiple quantum well solar cells with long operating wavelengths

Dahal, R.; Pantha, B. N.; Li, J.; Lin, J. Y.; Jiang, Hongxing

doi:10.1063/1.3081123

Cited by 348 publications

(203 citation statements)

References 15 publications

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“…The problem of phase separation was later resolved through improved processing steps due to advancement of growing InGaN alloys using MOCVD. 49 Growing InGaN epilayers on GaN beyond a critical thickness causes extended crystalline defects in the InGaN epilayer close to the InGaN/GaN interface, 50 primarily due to the large lattice mismatch between InN and GaN. The critical thickness of active layers in a p:In 0.175 Ga 0.835 N/n-In 0.16 Ga 0.84 N homo-junction was shown to be limited to 60 nm and 45 nm, respectively.…”

Section: The Iii-nitrides For Solar Cellsmentioning

confidence: 99%

“…XRD and I-V measurements shows degradation of electrical characteristics and crystal quality of a MOCVDgrown 24 nm InGaN layer by increasing the In content from 30% to 40%. 49 The electrical characteristics of several fabricated GaN-based solar cells are reported in Table I and sorted in order of device structure as well as In composition level. As shown, by increasing the In alloy content, the V oc and J sc are degraded in most of the device structures.…”

Section: The Iii-nitrides For Solar Cellsmentioning

confidence: 99%

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Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For Solar Cellsmentioning

confidence: 99%

Section: The Iii-nitrides For Solar Cellsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Furthermore, alloys of InN and GaN have recently attracted interest for use in multijunction photovoltaic devices [10][11][12] and as photoelectrodes for water splitting. [13][14][15][16][17][18][19][20] In photochemical water splitting, the InGaN semiconductor absorbs sunlight and thereby produces electrons and holes, which drives the water-splitting reaction.…”

Section: Alloys Ofmentioning

confidence: 99%

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

Moses

Miao

Yan

et al. 2011

The Journal of Chemical Physics

281

231

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Band gaps and band alignments for AlN, GaN, InN, and InGaN alloys are investigated using density functional theory with the with the Heyd-Scuseria-Ernzerhof {HSE06 [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 134, 8207 (2003); 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In content is calculated and a strong bowing at low In content is found, described by bowing parameters 2.29 eV at 6.25% and 1.79 eV at 12.5%, indicating the band gap cannot be described by a single composition-independent bowing parameter. Valence-band maxima (VBM) and conduction-band minima (CBM) are aligned by combining bulk calculations with surface calculations for nonpolar surfaces. The influence of surface termination [(1100) mplane or (1120) a-plane] is thoroughly investigated. We find that for the relaxed surfaces of the binary nitrides the difference in electron affinities between m-and a-plane is less than 0.1 eV. The absolute electron affinities are found to strongly depend on the choice of XC functional. However, we find that relative alignments are less sensitive to the choice of XC functional. In particular, we find that relative alignments may be calculated based on Perdew-Becke-Ernzerhof [J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 134, 3865 (1996)] surface calculations with the HSE06 lattice parameters. For InGaN we find that the VBM is a linear function of In content and that the majority of the band-gap bowing is located in the CBM. Based on the calculated electron affinities we predict that InGaN will be suited for water splitting up to 50% In content.

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“…There have been reports on the theoretical predictions of the conversion efficiency of In x Ga 1-x N solar cells that suggest that the maximum conversion efficiency of In x Ga 1-x N solar cells will reach 35-40% (Hamzaoui, 2005;Zhang, 2008). Experimental results of In x G a1-x N-based solar cells have been also reported (Chen, 2008;Zheng, 2008;Dahal, 2009;Kuwahara, 2010). Although the potential conversion efficiency of In x Ga 1-x N solar cells is promisingly high, the highest one so far obtained through an InGaN/InGaN superlattice structure remains as low as 2.5% (Kuwahara, 2011).…”

Section: Introductionmentioning

confidence: 90%