InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

Blake, Adam; Caselli, Derek; Durot, Christopher; Mueller, J. P. Balthasar; Parra, Eduardo; Gilgen, Joseph; Boley, Allison; Smith, David J.; Tsong, I. S. T.; Roberts, John C.; Piner, Edwin L.; Linthicum, K. J.; Cook, James; Koleske, Daniel; Crawford, Mary H.; Fischer, Arthur J.

doi:10.1063/1.3684557

Cited by 25 publications

(13 citation statements)

References 23 publications

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“…[12][13][14] Furthermore, ZrB 2 is reflective and metallic, and its use as a substrate in LEDs minimizes loss of light and simplifies the device geometry as ZrB 2 can be used as one of the ohmic contacts. 15 The crystal structure of bulk ZrB 2 is simple hexagonal with alternating layers of boron and zirconium as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Dissociation of trimethylgallium on the ZrB2(0001) surface

Manandhar¹,

Trenary²,

Otani³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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X-ray photoelectron spectroscopy and reflection absorption infrared spectroscopy (RAIRS) have been used to study the dissociative adsorption of trimethylgallium (TMG) on the ZrB 2 (0001) surface. Spectra were obtained as a function of annealing temperature following TMG exposure at temperatures of 95 and 300 K, and also as a function of TMG exposure for a surface temperature of 300 K. After annealing above 220 K, a significant decrease in the relative concentration of carbon and gallium occurred accompanied by a shift of $0.2 eV in the Ga 2p 3/2 binding energy. The RAIR spectra show that after annealing to $220 K, only one CH 3 deformation band at 1196 cm À1 remains, the intensity of which is considerably decreased indicating loss of at least one methyl group from TMG. Further annealing leads to the sequential loss of the other methyl groups. The first methyl desorbs while the last two dissociate to deposit two C atoms per TMG molecule onto the ZrB 2 surface. V

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Section: Introductionmentioning

confidence: 99%

Dissociation of trimethylgallium on the ZrB2(0001) surface

Manandhar¹,

Trenary²,

Otani³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…However, the epitaxial growth of GaN films on Si substrates still has at least three challenges by now. It is reported that the chemical reactions between Ga and Si can be solved by the insertion of AlN ,9-11 Al 2 O 3 , 12 or ZrB 2 13 buffer layer, to isolate Ga from Si. Second, the large thermal coefficient mismatch (54%) between GaN and Si will induce massive tensile stresses.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth

et al. 2015

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GaN-based light-emitting diodes (LEDs) with various reactor pressures for GaN nucleation layers (NLs) have been grown on Si (111) substrates by metal-organic chemical vapor deposition.The influence of reactor pressure for GaN NLs on the properties of GaN-based LEDs grown on Si (111) substrates is investigated in detail. It is revealed that crack-free GaN films are grown on the Si (111) substrate. As the reactor pressure for GaN NLs increases from 200 to 600 Torr, the full width at half maximum values of the X-ray diffraction rocking curves for the GaN (0002) and (10-12) planes decrease from 480 to 351 arcsec, and 868 to 445 arcsec, respectively, and therefore the threading dislocation density is greatly reduced, which is confirmed by the cross-sectional transmission electron microscopy measurement. Subsequently, the relationship between the bending and annihilation for dislocations and the modes for GaN NL are elucidated. Meanwhile, the effect of reactor pressure for GaN NL on the mode of GaN NL is also systematically studied.Furthermore, the light output power of GaN-based LEDs with GaN NLs grown at reactor pressure of 500 Torr is greatly improved by 73.66% in comparison with that of GaN-based LEDs with GaN NLs grown at reactor pressure of 200 Torr. This work provides a new approach for achieving highly-efficient GaN-based LEDs on Si (111) substrates.

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“…However, it is difficult to grow thick crack‐free GaN on Si substrates due to the large differences in the lattice constant and the thermal expansion coefficient between GaN and Si. In order to obtain high‐quality GaN on Si substrates with a crack‐free surface, it is necessary to design a relaxation layer before the main GaN growth .…”

Section: Introductionmentioning

confidence: 99%

High‐quality GaN film and AlGaN/GaN HEMT grown on 4‐inch Si(110) substrates by MOCVD using an ultra‐thin AlN/GaN superlattice interlayer

Shen

Takahashi

Ide

et al. 2014

Physica Status Solidi (b)

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We report the characterization results of GaN films and AlGaN/GaN heterostructure grown on 4‐inch Si(110) substrates by MOCVD using an ultra‐thin AlN/GaN superlattice interlayer (SL IL) structure. The structure optimization of the SL IL, characterizations of the GaN film quality and the strain state are carried out. The SL IL is found to play an important role in controlling the strain states in GaN films. A crack‐free GaN film up to 2 μm thick is achieved by inserting one SL IL. High‐quality GaN is obtained with the FWHM values of (002) and (102) diffraction peaks from a 2 μm‐thick GaN film being as narrow as 427 arcsec and 665 arcsec, respectively. A flat surface morphology of GaN with monolayer steps is obtained. Based on the SL IL technique, AlGaN/GaN heterostructure is grown with 2DEG mobility and sheet carrier density being ∼1500 cm2/Vs and 1.2 × 1013 cm−2. A high‐electron‐mobility transistor (HEMT) is fabricated and good DC characteristics are demonstrated.

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InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

Cited by 25 publications

References 23 publications

Dissociation of trimethylgallium on the ZrB2(0001) surface

Dissociation of trimethylgallium on the ZrB2(0001) surface

Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth

High‐quality GaN film and AlGaN/GaN HEMT grown on 4‐inch Si(110) substrates by MOCVD using an ultra‐thin AlN/GaN superlattice interlayer

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