2019
DOI: 10.1016/j.jlumin.2018.12.034
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InGaN/GaN multiple quantum well for superfast scintillation application: Photoluminescence measurements of the picosecond rise time and excitation density effect

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Cited by 7 publications
(6 citation statements)
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“…Another technique suitable for the nanofabrication of one dimensional semiconductors is metal-organic vapour-phase epitaxy (MOVPE), which allows for a layer by layer deposition of multiple quantum wells. Multiple hetero-structures composed of InGaN/GaN can be grown on a sapphire substrate (Toci et al 2019), which contributes to the mechanical stability of the scintillating layer. The replacement of the dead sapphire layer by state-of-the-art active materials such as LYSO or BGO could lead to a fully integrated nano-scintillator with a standard and fast scintillating phase.…”
Section: Enabling Technologiesmentioning
confidence: 99%
See 1 more Smart Citation
“…Another technique suitable for the nanofabrication of one dimensional semiconductors is metal-organic vapour-phase epitaxy (MOVPE), which allows for a layer by layer deposition of multiple quantum wells. Multiple hetero-structures composed of InGaN/GaN can be grown on a sapphire substrate (Toci et al 2019), which contributes to the mechanical stability of the scintillating layer. The replacement of the dead sapphire layer by state-of-the-art active materials such as LYSO or BGO could lead to a fully integrated nano-scintillator with a standard and fast scintillating phase.…”
Section: Enabling Technologiesmentioning
confidence: 99%
“…However, finding a technological efficient way to overcome the crystalline lattice mismatch between GaN and state-of-the-art scintillators is still a challenge. Currently, the maximum thickness obtained for this type of samples is limited to 10 µm (Toci et al 2019), which set constraints in the amount of energy deposited in the active region.…”
Section: Enabling Technologiesmentioning
confidence: 99%
“…Several types of scintillating nanomaterials with different levels of confinement (nanoplatelet, quantum wire, quantum dots) have been studied over many years. Among them, CdSe and CdSe/CdS [13,14,[27][28][29], CdZn/ZnS [30], ZnO quantum dot or nanoplatelets [15,[31][32][33], InGaN/GaN multi quantum wells [16,[34][35][36], the Cesium lead halide perovskyte CsPbX3 (X = Cl, Br,I) [17,37,38] for instance reach a fast photon emission with characteristic radiative decay times in the range of nanosecond or subnanosecond. An example of the decay time obtained for ZnO(Ga) nanomaterials is given in Figure 1 right.…”
Section: Nanomaterials Scintillatorsmentioning
confidence: 99%
“…The III-Nitride based semiconductors have attracted great attention for recent years because of many important application areas in technological devices [1]. Their application areas are listed as high electron mobility transistors (HEMTs), solar-blind detectors, detectors of ionizing radiation and scintillators, UV emitters for purification, curing and disinfection, light-emitting, and lasers diodes [2][3][4][5][6][7][8][9][10][11]. Especially, the GaN grown via Metal Organic Vapour Phase Epitaxy (MOVPE) is the most popular of the III-Nitride based semiconductors (AlN, InN, and their alloys) [12].…”
Section: Introductionmentioning
confidence: 99%