InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts

Lin, Yan‐Cheng; Chang, Shoou‐Jinn; Su, Yan–Kuin; Tsai, Tsuen‐Chiuan; Chang, Chin Sung; Shei, Shih–Chang; Kuo, Chia Wei; Chen, S. C.

doi:10.1016/s0038-1101(02)00440-9

Cited by 110 publications

(45 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With an improved process, lab-produced aluminum-doped zinc oxide (AZO) film has been shown to possess physical properties similar to those of ITO film. Zinc is however, cheaper than indium, which is an advantage for extensive material application [4,5]. The crystalline AZO etch rate is faster than that of non-crystalline ITO film [6], which helps simplify the transparent conducting film process.…”

Section: Introductionmentioning

confidence: 99%

A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film

Lin

Jian

Jiang

2008

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film

Lin

Jian

Jiang

2008

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

“…To a certain extent, increase in metal thickness enhanced contact but involves optical loss. 11 As such, there is room for significant improvement by finding the optimal thickness of intermediate metal layers. Third, despite the differences in EL intensity, all samples exhibited similar EL spectra with a dominant emission peak at 446 nm, and no noticeable deep level emissions were observed [ Fig.…”

mentioning

confidence: 99%

Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes

Lee

Jeong

Choi

et al. 2011

Applied Physics Letters

View full text Add to dashboard Cite

We demonstrate the use of graphene based transparent sheets as a p-type current spreading layer in GaN light emitting diodes (LEDs). Very thin Ni/Au was inserted between graphene and p-type GaN to reduce contact resistance, which reduced contact resistance from ∼5.5 to ∼0.6Ω/cm2, with no critical optical loss. As a result, LEDs with metal-graphene provided current spreading and injection into the p-type GaN layer, enabling three times enhanced electroluminescent intensity compared with those with graphene alone. We confirmed very strong blue light emission in a large area of the metal-graphene layer by analyzing image brightness.

show abstract

“…Therefore, a semi-transparence contact layer [1] or interdigitated designs of electrode [2] on p-GaN for the conventional GaN LEDs on sapphire were needed to spread the current and increase the light emission efficiency. However, due to the absorption of the semi-transparence contact layer [3], the light output power of these conventional LEDs on sapphire was reduced. Moreover, the heat dissipation from the conventional LEDs on sapphire was poor due to low thermal conductivity of the sapphire.…”

Section: Introductionmentioning

confidence: 99%

High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application

Chu¹,

Cheng²,

Liu³

et al. 2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

The characteristics of the GaN based Vertical Light Emitting Diodes on Metal alloyed Substrate (VLEDMS) were investigated. The VLEDMS exhibits very good current-voltage behaviour with low average dynamic resistance of 0.7 Ω and low operated voltage of 3.2 V at 350 mA. High current operation up to 2000 mA in continuous mode was demonstrated without any performance deterioration. The high thermal conductivity of metal alloyed substrate demonstrated excellent heat dissipation capability. Chip scaling without efficiency loss shows a unique property of VLEDMS and enabled to enlarge up to 2 mm × 2 mm chip size. A light output efficiency of 70 lm/W or better was achieved in single chip or multiple chips package. Coupled with mass production ability, VLEDMS is very suitable for general lighting application.

show abstract

InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts

Cited by 110 publications

References 23 publications

A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film

A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film

Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes

High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application

Contact Info

Product

Resources

About