InGaN/GaN Laser Diodes and their Applications

Abstract

Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

“…InGaN/GaN-based visible light laser diodes, due to their high brightness and high efficiency [ 1 ], are the subject of many important applications in solid-state lighting [ 2 , 3 ], display applications [ 2 , 4 ], car headlights [ 5 , 6 ], projectors [ 7 , 8 ], atomic clocks [ 9 , 10 ], and laser-based high-density storage systems [ 11 ]. Moreover, these devices are crucial components for emerging visible light communication systems [ 12 , 13 , 14 ]. All applications that utilize visible laser diode technologies are based so far on edge-emitting devices (Edge-Emitting Lasers—EEL).…”

Epitaxial growth of semiconductor alloys by computational modeling

“…From those years until now, many of the advances in optoelectronics cannot be described without this group of materials. In particular, there is great interest in indium gallium nitride (InGaN), as it has several attributes that will make it an appropriate material for the fabrication of white solid-state devices, whose applications can be found in lighting, power electronics, and tandem solar cells, using it as heterostructures of In x Ga 1-x N/GaN (gallium nitride) [2,3]. One of the fundamental characteristics of InGaN is its direct band gap (Eg), which can be adjusted from values of 0.65 eV (infrared) to 3.42 eV (ultraviolet), passing through the violet-blue, green, and yellow spectral region, depending on the molar fraction of indium (indicated by the subscript x in the stoichiometric formula) in compound [4].…”

Vector Rayleigh Diffraction of High-Power Laser Diode Beam in Optical Communication

“…Considering that laser diodes (LDs) are the efficient light source and easy to integrate, LD-enabled optical wireless communication (OWC) is an emerging technology for realizing highconfidentiality and high-speed point-to-point (PtP), vehicle-tovehicle, and white-lighting data access links in free-space communication [1][2][3][4][5][6], indoor communication [7,8], underwater communication [9][10][11], and optical networks [12][13][14][15][16].…”