InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

Kong, Bo Hyun; Cho, Hyung Koun; Kim, Mi Yang; Choi, R. J.; Kim, Bae Kyun

doi:10.1016/j.jcrysgro.2011.01.085

Cited by 17 publications

(5 citation statements)

References 13 publications

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“…In addition to ZnO's applicability as the n-junction material in LEDs, Al-doped ZnO has also been used as a current spreading layer in InGaN/GaN LEDs [275] and as a buffer layer in organic LEDs [276], where the high conductivity of ZnO films facilitates control of the current in various layers of the LED and therefore improves performance. Another use for ZnO's optical properties that has been investigated using ALD are UV photodetectors, which utilize ZnO's band gap in a p-n junction or metal-semiconductormetal configuration to detect UV radiation [277][278][279].…”

Section: Light-emitting Diodesmentioning

confidence: 99%

Atomic layer deposition of ZnO: a review

Tynell

Karppinen

2014

Semicond. Sci. Technol.

365

299

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Due to the unique set of properties possessed by ZnO, thin films of ZnO have received more and more interest in the last 20 years as a potential material for applications such as thin-film transistors, light-emitting diodes and gas sensors. At the same time, the increasingly stringent requirements of the microelectronics industry, among other factors, have led to a dramatic increase in the use of atomic layer deposition (ALD) technique in various thin-film applications. During this time, the research on ALD-grown ZnO thin films has developed from relatively simple deposition studies to the fabrication of increasingly intricate nanostructures and an understanding of the factors affecting the fundamental properties of the films. In this review, we give an overview of the current state of ZnO ALD research including the applications that are being considered for ZnO thin films.

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Section: Light-emitting Diodesmentioning

confidence: 99%

Atomic layer deposition of ZnO: a review

Tynell

Karppinen

2014

Semicond. Sci. Technol.

365

299

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“…ZnO/ZnO nanodots in SiO2 composite have been shown to have amplified spontaneous emission at 380nm [65]. AZO films(Al doped ZnO) have been used as electrodes in organic LEDs [66] and for current spreading in InGaN/GaN LED [67]. Luka et al [68] recently reviewed the growth of ZnO and AL:ZnO films using ALD and the possibility for its use in LED and photoelectrodes.…”

Section: Advances In Materials Developmentmentioning

confidence: 99%

Frontiers in Applied Atomic Layer Deposition (ALD) Research

Wu¹,

Wu²,

Banerjee³

et al. 2012

MSF

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Atomic layer deposition (ALD) has been a key player in advancing the science and technology of nanomaterials synthesis and device fabrication. The monolayer (ML) control of growth rate obtained with ALD combined with its ability to self-limit growth reactions at the gas-substrate interface can be exploited in fundamentally new ways to produce novel composite nanomaterials or precisely tailored 3D nanostructures. Fueling the rapid popularity of ALD in nanotechnology research is the relative simplicity of the hardware and exciting new chemistries that allow researchers to deposit a host of new materials including pure metals, metal oxides, sulphides and nitrides and organic thin films with relative ease and superb accuracy. In this review article, we present four impact areas - microelectronics, energy harvesting and energy storage devices and sensors and photonic devices that have benefitted from such an approach. While many excellent review articles are available on the fundamental chemistry of ALD processes, we focus here on the applied science and engineering aspects of cutting edge ALD research

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“…Today, indium tin oxide (ITO) with superior conductivity and transparency has been widely used as a CSL material in NUV LEDs [11][12][13]. However, the cost of ITO can grow high in the future due to the scarceness of indium while its thermal stability is not satisfactory [14,15]. Aluminum-doped zinc oxide (AZO) is an alternative indium-free material, which has similar electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Liu¹,

Ou²,

Zhu³

et al. 2018

Opt. Mater. Express

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We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

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InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

Cited by 17 publications

References 13 publications

Atomic layer deposition of ZnO: a review

Atomic layer deposition of ZnO: a review

Frontiers in Applied Atomic Layer Deposition (ALD) Research

InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

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