InGaN blue light-emitting diodes with ZnO nucleation layers prepared by the sol–gel method

Abstract

InGaN blue light-emitting diodes (LEDs) were fabricated on a sapphire substrate with a ZnO nucleation layer that was deposited by the sol-gel method. Typical current-voltage (I-V) characteristics of the InGaN blue LEDs with a ZnO nucleation layer have a forward-bias voltage of 3.25 V at an injection current of 20 mA, and reverse currents of 2.33 × 10 −8 and 5.91 × 10 −7 A at reverse biases of 10 and 20 V, respectively. The InGaN blue LEDs have an ideality factor n of 1.27 at a forward bias of 1.8 V. The external quantum efficiency at an injection current of 20 mA was measured to be 12.82%. The light output power reached as high as 23.2 mW at a forward current of 100 mA.

Effect of deep‐level states on current–voltage characteristics and electroluminescence of blue and UV light‐emitting diodes

“…The uppermost regime, n3 was used for the calculation of ideality factors, as given in Table 1. The range of voltage over which n3 occurs is comparable to that used by other researchers in calculating ideality factors for blue LEDs 7–10, 18–20.…”

“…In some recent studies of GaN/InGaN/GaN MQW structures, ideality factors 1 < n < 2 (a combination of diffusion in the quasineutral and recombination in the space‐charge regions) have been observed; these are attributed to higher material quality than that used in previous studies 9, 18–20. However, at biases below turn‐on, in most cases excess currents are observed that cannot be meaningfully described by the exponential diode equation.…”

Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying

“…For example, GaN-based white light-emitting diode (LED) is the most widely used solid state light source, which included a blue LED chip and a yellow phosphor coating. The advantages of the GaN-based LED white light source are long lifetime, high energy efficiency, small size, ability to produce color light directly without filtering, and integration with other semiconductor electronic elements [1][2][3][4][5][6]. However, the disadvantages of the GaN-based LED white light source are high manufacturing cost and low yield rate due to the expensive growth technology and source materials of metalorganic chemical vapor deposition and the Ga-N bonding mechanism, respectively.…”

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

“…The numerous applications of GaN-based light-emitting diodes (LEDs) include traffic lights, back light units in liquid crystal displays, indoor and outdoor lighting, street lighting, and exterior advertising displays. As the conventional application in the recent decade, low-temperature GaN (LT-GaN) buffer layers are inserted between the LED structure and substrate to increase the internal quantum efficiency of LEDs by improving the crystal quality of the LED structure [1][2][3][4]. For solid-state lighting applications, the commercial use of a patterned sapphire substrate (PSS) technology has increased the light extraction efficiency of the LED structure [3,[5][6][7][8][9][10].…”