InGaN-based true green laser diodes on novel semi-polar GaN substrates

Ueno, Masaki; Yoshizumi, Yusuke; Enya, Yohei; Kikuchi, Takashi; Adachi, Masahiro; Takagi, Shinpei; Tokuyama, Shinji; Sumitomo, Takamichi; Sumiyoshi, Kazuhide; Saga, Nobuhiro; Ikegami, Takatoshi; Kawasaki, Koji; Nakamura, Toshio

doi:10.1016/j.jcrysgro.2010.07.016

Cited by 25 publications

(23 citation statements)

References 36 publications

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“…This can be explained by the fact that in the green laser on the

{20 \bar{2} 1}

plane, degradation of crystallinity of the InGaN quantum wells with longer wavelength is suppressed, and the piezoelectric field is weak. The quantum well layer on the

{20 \bar{2} 1}

plane is highly uniform, as confirmed by a small EL half‐width and uniform PL images . This also agrees with evaluation by time‐resolved photoluminescence ; in the case of the

{20 \bar{2} 1}

plane, the crystal quality of the quantum well layer can be maintained even at long wavelengths.…”

Section: Features Of Green Laser On Semipolar {202¯1} Planesupporting

confidence: 83%

High‐Power True Green Laser Diodes on Semipolar GaN Substrates

Kawasaki

Saga

Ueno

et al. 2015

Elect Comm in Japan

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SUMMARYInGaN green laser diodes (LDs) on semipolar {2021} GaN substrates with output powers of over 100 mW in the spectral region beyond 530 nm are demonstrated. Wall plug efficiencies as high as 7.0-8.9% are realized in the wavelength range of 525-532 nm, exceeding those reported for c-plane LDs. The lifetime at a case temperature of 55 • C was estimated to be over 5000 hours for an optical output power of 50 mW. These results suggest that InGaN green LDs on the {2021} plane are better suited as light sources for applications requiring wavelengths above 525 nm. C⃝ 2015 Wiley Periodicals, Inc. Electron Comm Jpn, 98(5): 9-14, 2015; Published online in Wiley Online Library (wileyonlinelibrary.com).

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“…This can be explained by the fact that in the green laser on the

{20 \bar{2} 1}

plane, degradation of crystallinity of the InGaN quantum wells with longer wavelength is suppressed, and the piezoelectric field is weak. The quantum well layer on the

{20 \bar{2} 1}

plane is highly uniform, as confirmed by a small EL half‐width and uniform PL images . This also agrees with evaluation by time‐resolved photoluminescence ; in the case of the

{20 \bar{2} 1}

plane, the crystal quality of the quantum well layer can be maintained even at long wavelengths.…”

Section: Features Of Green Laser On Semipolar {202¯1} Planesupporting

confidence: 83%

High‐Power True Green Laser Diodes on Semipolar GaN Substrates

Kawasaki

Saga

Ueno

et al. 2015

Elect Comm in Japan

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“…The slightly wider linewidth of the spontaneous emission, compared to that typically observed for QWs, is most probably due to inhomogeneity in QD size and alloy composition. The blueshift in 5 nm between the lasing and luminescence peaks is smaller than the ϳ12 nm reported for a InGaN/GaN MQW laser grown on semipolar GaN, 6,9 and significantly smaller than that measured for lasers grown on polar GaN. 3 The inset to Fig.…”

mentioning

confidence: 61%

A InGaN/GaN quantum dot green (λ=524 nm) laser

Zhang

Banerjee

Lee

et al. 2011

Applied Physics Letters

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Influencing modulation properties of quantum-dot semiconductor lasers by carrier lifetime engineering Appl. Phys. Lett. 101, 131107 (2012) Athermal and tunable operations of 850nm vertical cavity surface emitting lasers with thermally actuated T-shape membrane structure Appl. Phys. Lett. 101, 121115 (2012) High-power tunable two-wavelength generation in a two chip co-linear T-cavity vertical external-cavity surfaceemitting laser Appl. Phys. Lett. 101, 121110 (2012) Broad wavelength tunability from external cavity quantum-dot mode-locked laser

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“…Wurtzite InGaN quantum wells (QWs) are a very important gain medium for fabricating optoelectronic devices, such as near ultraviolet, blue, and green light emitting diodes (LEDs) and laser diodes (LDs) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The growth of InGaN QWs along the [0001] direction leads to a QW system with a very strong quantum confined Stark effect due to the large internal electric fields which result from discontinuities in spontaneous and piezoelectric polarization at QW heterointerfaces [15,16].…”

Section: Introductionmentioning

confidence: 99%

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

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It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorptionlike technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

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InGaN-based true green laser diodes on novel semi-polar GaN substrates

Cited by 25 publications

References 36 publications

High‐Power True Green Laser Diodes on Semipolar GaN Substrates

High‐Power True Green Laser Diodes on Semipolar GaN Substrates

A InGaN/GaN quantum dot green (λ=524 nm) laser

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

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