InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency

Zhou, Min; Wang, Wenjuan; Qu, H.; Han, Hao; Zhu, Yicheng; Guo, Zilu; Liu, Gui; Wang, Ding; Lü, Wei

doi:10.1007/s11082-020-02422-5

Cited by 5 publications

(2 citation statements)

References 20 publications

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“…It poses severe requirements on material, operation, and signal processing. For instance, there are few choices of materials to fabricate such kinds of devices, since they must be clean enough (background doping concentration in ~10 15 cm −3 ) to bear the high electric field (0.1–1 MV/cm) without destructive breakdown 7 , 31 . Meanwhile, the driving and signal-processing circuit should be specially designed due to the ultra-high driving voltage (up to 150 V).…”

Section: Resultsmentioning

confidence: 99%

Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes

Wang,

Xia,

Liu

et al. 2024

Nat Commun

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Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe2 structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication. Owing to this effect, the room-temperature threshold energy approaches the fundamental limit, Ethre ≈ Eg, where Eg is the bandgap of the semiconductor. Our findings offer an alternative perspective on the design and fabrication of future avalanche and hot-carrier photovoltaic devices.

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Section: Resultsmentioning

confidence: 99%

Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes

Wang,

Xia,

Liu

et al. 2024

Nat Commun

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“…Among various types of semiconductor optoelectronic devices, avalanche photodiodes (APDs) are characterized by the multiplication of electron-hole pairs generated by the absorption of incident photons and play important roles in a variety of applications including optical communications, three-dimensional lidar detection, and photoluminescence [7][8][9][10]. In particular, separated absorption, grading, charge, and multiplication (SAGCM)-structure InGaAs/InP APDs have attracted widespread attention because of their high sensitivity, fast response, large internal gain, and low power consumption [11][12][13][14]. However, most studies on InGaAs/InP APDs have focused on their structural design and fabrication for the purpose of performance improvement; the non-equilibrium dynamics of photogenerated carriers on the device surface have seldom been discussed.…”

Section: Introductionmentioning

confidence: 99%

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Tian,

Yang,

et al. 2024

Nanomaterials

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The spatiotemporal evolution of photogenerated charge carriers on surfaces and at interfaces of photoactive materials is an important issue for understanding fundamental physical processes in optoelectronic devices and advanced materials. Conventional optical probe-based microscopes that provide indirect information about the dynamic behavior of photogenerated carriers are inherently limited by their poor spatial resolution and large penetration depth. Herein, we develop an ultrafast scanning electron microscope (USEM) with a planar emitter. The photoelectrons per pulse in this USEM can be two orders of magnitude higher than that of a tip emitter, allowing the capture of high-resolution spatiotemporal images. We used the contrast change of the USEM to examine the dynamic nature of surface carriers in an InGaAs/InP avalanche photodiode (APD) after femtosecond laser excitation. It was observed that the photogenerated carriers showed notable longitudinal drift, lateral diffusion, and carrier recombination associated with the presence of photovoltaic potential at the surface. This work demonstrates an in situ multiphysics USEM platform with the capability to stroboscopically record carrier dynamics in space and time.

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Investigations on a 1 K hybrid cryocooler composed of a four-stage Stirling-type pulse tube cryocooler and a Joule-Thomson cooler. Part A: Theoretical analyses and modeling

Zhang

Dang

2021

Cryogenics

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InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency

Cited by 5 publications

References 20 publications

Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes

Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Investigations on a 1 K hybrid cryocooler composed of a four-stage Stirling-type pulse tube cryocooler and a Joule-Thomson cooler. Part A: Theoretical analyses and modeling

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