InGaAsP-InP nanoscale waveguide-coupled microring lasers with submilliampere threshold current using Cl/sub 2/--N/sub 2/-based high-density plasma etching

Park, Seoijin; Kim, Seong-Soo; Wang, Liwei; Ho, Seng-Tiong

doi:10.1109/jqe.2004.842311

IEEE J. Quantum Electron.

2005

DOI: 10.1109/jqe.2004.842311

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InGaAsP-InP nanoscale waveguide-coupled microring lasers with submilliampere threshold current using Cl/sub 2/--N/sub 2/-based high-density plasma etching

Seoijin Park

Seong-Soo Kim

Liwei Wang

et al.

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Cited by 37 publications

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“…4(a) and 4(b) can be achieved through anisotropic inductively coupled plasma reactive ion etching (ICP-RIE), for which aspect ratios exceeding 10:1 in diamond 28 and 50:1 in Si 29 have been demonstrated. High-aspectratio fins are already employed in InP-based PICs, 30 where the fin waveguide design can provide an alternative to the conventional InGaAsP guiding layer, leading to higher confinement and smaller mode area.…”

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confidence: 99%

Single-mode optical waveguides on native high-refractive-index substrates

Grote¹,

Bassett²

2016

APL Photonics

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High-refractive-index semiconductor optical waveguides form the basis for modern photonic integrated circuits (PICs). However, conventional methods for achieving optical confinement require a thick lower-refractive-index support layer that impedes large-scale co-integration with electronics and limits the materials on which PICs can be fabricated. To address this challenge, we present a general architecture for single-mode waveguides that confine light in a high-refractive-index material on a native substrate. The waveguide consists of a high-aspect-ratio fin of the guiding material surrounded by lower-refractive-index dielectrics and is compatible with standard top-down fabrication techniques. This letter describes a physically intuitive, semi-analytical, effective index model for designing fin waveguides, which is confirmed with fully vectorial numerical simulations. Design examples are presented for diamond and silicon at visible and telecommunications wavelengths, respectively, along with calculations of propagation loss due to bending, scattering, and substrate leakage. Potential methods of fabrication are also discussed. The proposed waveguide geometry allows PICs to be fabricated alongside silicon CMOS electronics on the same wafer, removes the need for heteroepitaxy in III-V PICs, and will enable wafer-scale photonic integration on emerging material platforms such as diamond and SiC.

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confidence: 99%

Single-mode optical waveguides on native high-refractive-index substrates

Grote¹,

Bassett²

2016

APL Photonics

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Sub‐Micron Anisotropic InP‐based III–V Semiconductor Material Deep Etching for On‐Chip Laser Photonics Devices

Lee

Krishnamurthy

et al. 2017

Adv Eng Mater

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Two InP-based III-V semiconductor etching recipes are presented for fabrication of on-chip laser photonic devices. Using inductively coupled plasma system with a methane free gas chemistry of chlorine and nitrogen at a high substrate temperature of 250 C, high aspect ratio, anisotropic InP-based nano-structures are etched. Scanning electron microscopy images show vertical sidewall profile of 90 AE 3 , with aspect ratio as high as 10. Atomic Force microscopy measures a smooth sidewall roughness root-mean-square of 2.60 nm over a 3 Â 3 μm scan area. The smallest feature size etched in this work is a nano-ring with inner diameter of 240 nm. The etching recipe and critical factors such as chamber pressure and the carrier plate effect are discussed. The second recipe is of low temperature (À10 C) using Cl 2 and BCl 3 chemistry. This recipe is useful for etching large areas of III-V to reveal the underlying substrate. The availability of these two recipes has created a flexible III-V etching platform for fabrication of on-chip laser photonic devices. As an application example, anisotropic InP-based waveguides of 3 μm width are fabricated using the Cl 2 and N 2 etch recipe and waveguide loss of 4.5 dB mm À1 is obtained.

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Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

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InGaAsP-InP nanoscale waveguide-coupled microring lasers with submilliampere threshold current using Cl/sub 2/--N/sub 2/-based high-density plasma etching

Cited by 37 publications

References 16 publications

Single-mode optical waveguides on native high-refractive-index substrates

Single-mode optical waveguides on native high-refractive-index substrates

Sub‐Micron Anisotropic InP‐based III–V Semiconductor Material Deep Etching for On‐Chip Laser Photonics Devices

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

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