InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror Facets

Gurp, G. J. van; Jacobs, J. M.; Binsma, J.J.M.; Tiemeijer, L.F.

doi:10.1143/jjap.28.l1236

Cited by 29 publications

(2 citation statements)

References 6 publications

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“…The removal rate of this product and therefore the etch rate of In-containing compounds has been shown to be highly dependent on temperature [4,5] and/or additive gases such as Ar and N 2 [6][7][8][9][10][11]. At temperatures above 150 • C there is a significant increase in etch rate due to thermally-assisted desorption of InCl 3 and in reactive ion etching (RIE) systems with Cl 2 or BCl 3 chemistries it has been necessary to use sample temperatures >150 • C while etching [12,13]. In RIE and electron cyclotron resonance (ECR) systems significant increases in room temperature etch rate of In-containing materials by the addition of neutral additive gases have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Selective etching of AlGaInP laser structures in a BCl₃/Cl₂inductively coupled plasma

Edwards

Westwood

Smowton

2006

Semicond. Sci. Technol.

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The etch rate of AlGaInP-based laser structures and selectivity, with respect to SiO 2 , are reported as a function of inductively coupled plasma (ICP) process parameters for a BCl 3 /Cl 2 etch chemistry. At room temperature InCl 3 , a reaction product of In in this environment, is involatile, whereas the products of etching SiO 2 are relatively volatile resulting in low selectivity (∼4:1). Temperature is the most important variable for improving etch rate and selectivity. At 190 • C it is possible to obtain an etch rate up to 0.7 µm min −1 and a selectivity as high as 17:1. It is shown that increasing the ICP power increases the etch rate of AlGaInP but decreases the selectivity, whereas increased reactive ion etching (RIE) power results in improved etch rate and selectivity. The etch rate is also found to be higher at lower chamber pressures although again with little or no change in selectivity. These results are consistent with an AlGaInP etch rate that is dependent on both dc bias and ion flux, in contrast to a SiO 2 etch mechanism that is relatively independent of dc bias but strongly dependent on ion flux. With total gas flow kept constant the etch rate and selectivity are found to increase with the fraction of Cl 2 present. The addition of Ar to the gas mix does increase the etch rate, reaching a maximum at around 70% Ar, but without any significant effect on selectivity.

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Section: Introductionmentioning

confidence: 99%

Selective etching of AlGaInP laser structures in a BCl₃/Cl₂inductively coupled plasma

Edwards

Westwood

Smowton

2006

Semicond. Sci. Technol.

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show abstract

“…However, it is generally found that a non-volatile etch product (InCl 3 ) rapidly forms a thick selvedge layer that leads to low etch rates and rough non-stoichiometric surfaces. In reactive ion etching (RIE) it is necessary to heat samples to ∼ 150 • C in order to promote desorption of the InCl 3 [15,16]. Recent work has shown that sample heating to this temperature is not necessary if very high ion densities can be produced, for example by microwave enhancement of the plasma [2,[17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Comparison of and plasma chemistries for dry etching of InGaAlP alloys

Hong

Lee

Santana

et al. 1996

Semicond. Sci. Technol.

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Etch rates above 1 µm min −1 have been obtained for BCl 3 /Ar and BCl 3 /N 2 plasma etching of In 0.5 Ga 0.5 P, Al 0.5 Ga 0.5 P and Al 0.5 In 0.5 P under electron cyclotron resonance (ECR) conditions. The etched surface morphologies are a strong function of the ratio of chlorine radicals to total ion density in the discharges, and are smoother in BCl 3 /Ar. Non-optimized etching conditions produce rough surfaces characterized by the presence of chlorine and boron-containing residues and substantial post-oxidation. We believe that the high ion flux available under ECR conditions provides efficient sputtering of the normally involatile InCl 3 , and thus a selvedge layer of this material is prevented from forming. Therefore the etch rates are much higher and the surface morphologies smoother in ECR discharges. The etch rates of Al x Ga 1−x P are much lower than the other two ternary compounds and are independent of composition over the range x = 0.05-0.70 for fixed plasma conditions.

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Long Wavelength Lasers and OEIC Transmitters

Lee¹,

1994

Optoelectronic Integration: Physics, Technology and Applications

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InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror Facets

Abstract: Reactive ion etching in chlorine, methane, argon and hydrogen was used to etch smooth vertical mirror facets on both sides of InGaAsP/InP lasers. Optical measurements and lifetests show these lasers to have the same characteristics as lasers with cleaved facets.

Cited by 29 publications

References 6 publications

Selective etching of AlGaInP laser structures in a BCl₃/Cl₂inductively coupled plasma

Selective etching of AlGaInP laser structures in a BCl₃/Cl₂inductively coupled plasma

Comparison of and plasma chemistries for dry etching of InGaAlP alloys

Long Wavelength Lasers and OEIC Transmitters

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InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror Facets

Abstract: Reactive ion etching in chlorine, methane, argon and hydrogen was used to etch smooth vertical mirror facets on both sides of InGaAsP/InP lasers. Optical measurements and lifetests show these lasers to have the same characteristics as lasers with cleaved facets.

Cited by 29 publications

References 6 publications

Selective etching of AlGaInP laser structures in a BCl3/Cl2inductively coupled plasma

Selective etching of AlGaInP laser structures in a BCl3/Cl2inductively coupled plasma

Comparison of and plasma chemistries for dry etching of InGaAlP alloys

Long Wavelength Lasers and OEIC Transmitters

Contact Info

Product

Resources

About

Selective etching of AlGaInP laser structures in a BCl₃/Cl₂inductively coupled plasma

Selective etching of AlGaInP laser structures in a BCl₃/Cl₂inductively coupled plasma