Technical Digest., International Electron Devices Meeting
DOI: 10.1109/iedm.1988.32818
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InGaAsP/InP DFB laser with a new grating structure by MOCVD

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Cited by 2 publications
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“…5. The base grating is formed by the holography technique on a uniform narrow bandgap InGaAsP layer with its composition chosen the same as the quantum well, where the floating grating technique [14] is adopted not only to guarantee a repeatable base grating index coupling strength but also to make sure that periodical part of the narrow bandgap InGaAsP layer will be completely removed. After the successive regrowth of a p-doped InP refilling layer and an n-doped wide bandgap InGaAsP layer, a second floating grating with a sampling period is formed through a standard photolithography and etching process, with part of the n-doped wide bandgap InGaAsP layer completely removed in each of the sampling period.…”
Section: B Structurementioning
confidence: 99%
“…5. The base grating is formed by the holography technique on a uniform narrow bandgap InGaAsP layer with its composition chosen the same as the quantum well, where the floating grating technique [14] is adopted not only to guarantee a repeatable base grating index coupling strength but also to make sure that periodical part of the narrow bandgap InGaAsP layer will be completely removed. After the successive regrowth of a p-doped InP refilling layer and an n-doped wide bandgap InGaAsP layer, a second floating grating with a sampling period is formed through a standard photolithography and etching process, with part of the n-doped wide bandgap InGaAsP layer completely removed in each of the sampling period.…”
Section: B Structurementioning
confidence: 99%