InGaAsP/InP 1.55-?m lasers with chemically assisted ion beam-etched facets

Daleiden, J.; Eisele, K.; Keller, Robert C.; Vollrath, G.; Fiedler, F.; Ralston, J.D.

doi:10.1007/bf00943621

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…The high-magnification transmission electron microscopy (TEM) image in Figure c reveals the cross-sectional geometry and compositional structure of a NW. Regarding the cross section, a slight sidewall slope arising from the mechanical etching process led to the formation of the trapezoidal cross-sectional shape . Therefore, one can readily identify the cross-sectional orientation based on the shape and determine the electrical polarity of the NW as well.…”

Section: Resultsmentioning

confidence: 99%

“…Regarding the cross section, a slight sidewall slope arising from the mechanical etching process led to the formation of the trapezoidal crosssectional shape. 47 Therefore, one can readily identify the crosssectional orientation based on the shape and determine the electrical polarity of the NW as well. In addition, the sidewall slope provides a better topological condition when the top graphene contact is conformally applied to the top surface of the NW.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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All-Graphene-Contact Electrically Pumped On-Demand Transferrable Nanowire Source

Kim

Park

et al. 2022

Nano Lett.

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On-demand NW light sources in a photonic integrated circuit (PIC) have faced several practical challenges. Here, we report on an all-graphene-contact, electrically pumped, on-demand transferrable NW source that is fabricated by implementing an all-graphene-contact approach in combination with a highly accurate microtransfer printing technique. A vertically p−i−n-doped top-down-fabricated semiconductor NW with optical gain structures is electrically pumped through the patterned multilayered graphene contacts. Electroluminescence (EL) spectroscopy results reveal that the electrically driven NW device exhibits strong EL emission between the contacts and displays waveguiding properties. Further, a single NW device is precisely integrated into an existing photonic waveguide to perform light coupling and waveguiding experiments. Three-dimensional numerical simulation results show a good agreement with experimental observations. We believe that our all-graphene-contact approach is readily applicable to various micro/nanostructures and devices, which facilitates stable electrical operation and thus extends their practical applicability in compact integrated circuits.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

All-Graphene-Contact Electrically Pumped On-Demand Transferrable Nanowire Source

Kim

Park

et al. 2022

Nano Lett.

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“…For example, for InP semiconductor compound etching, the etching selectivity of poly͑methyl methacrylate͒ ͑PMMA͒ is as low as 2-5. 5 In addition, PMMA could not resist high temperatures over 200°C, which is required by chlorine-based InP dry etching to remove the by-product during the etching process. Hence, SiO 2 or SiN 4 are typically used as intermediate masks for indirect pattern transfer.…”

mentioning

confidence: 99%

Sub-100 nm Nanolithography and Pattern Transfer on Compound Semiconductor Using Sol-Gel-Derived TiO[sub 2] Resist

Liu

2008

J. Electrochem. Soc.

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Typical methods for sub-100 nm compound semiconductor patterning are based on indirect pattern transfer using SiO 2 or SiN 4 as intermediate masks, which inevitably increase the complexity of pattern transfer and cause potential damage to samples. We present an approach of direct pattern transfer using Ti͑OBu n ͒ 4 sol-gel-derived TiO 2 resist as mask. The optimal dose of TiO 2 resist for E-beam lithography is ϳ220 mC/cm 2 . The sample InP compound semiconductor etching selectivity to TiO 2 resist is as high as 9:1 with aspect ratio of over 30:1. Various sub-100 nm scale inductively coupled plasma etching patterns are obtained with a high-quality etching profile. The smallest feature is as small as 20 nm wide with a depth of over 600 nm.Compound semiconductor-based devices have a variety of applications in communications, photonics, and optoelectronics, such as transistors, lasers, diodes, photodetectors, etc. Recently, semiconductor devices with a sub-100 nm scale have been drawing more and more attention due to their high integratability and various unique applications, such as very-large-scale integration, quantum disk confinement structure, and photonic bandgap. 1-4 For those purposes, various instruments and techniques have been developed to reduce the size of compound semiconductor devices to such a small scale.However, currently sub-100 nm patterning of a compound semiconductor is limited by the lithography resist. For example, for InP semiconductor compound etching, the etching selectivity of poly͑methyl methacrylate͒ ͑PMMA͒ is as low as 2-5. 5 In addition, PMMA could not resist high temperatures over 200°C, which is required by chlorine-based InP dry etching to remove the by-product during the etching process. Hence, SiO 2 or SiN 4 are typically used as intermediate masks for indirect pattern transfer. First, nanopatterns are formed on resist using nanolithography. Next, the patterns are transferred to SiO 2 or SiN 4 by dry etching. Finally, after removing the resist and subsequent pattern transfer to the compound semiconductor by etching using intermediate SiO 2 or SiN 4 mask, this intermediate mask has to be removed for the subsequent fabrication process. These additional mask transfer and etching away processes inevitably increase the complexity of InP submicrometer patterning, especially for sub-100 nm size patterns. Therefore, it is desirable to find an easier and effective method of compound semiconductor pattern transfer. One method is to use the recently reported metal oxide nanolithography resist, 6-8 which is expected to have harder structures and higher resistance to temperature and etching chemicals.In this paper, we present a method of sub-100 nm direct pattern transfer of compound semiconductor using sol-gel-derived spincoatable TiO 2 resist as mask. Here, we specifically demonstrate the technique on InP compound semiconductor using inductively coupled plasma reactive ion etching ͑ICP-RIE͒. This technique can be readily extended to GaAs, InGaAs, InGaP, InAlAs, AlGaAs, InGaAsP, and other com...

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Multiple air-gap filters and constricted mesa lasers – material processing meets the front of optical device technology

Daleiden

Hillmer

2003

Appl. Phys. B

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InGaAsP/InP 1.55-?m lasers with chemically assisted ion beam-etched facets

Cited by 6 publications

References 8 publications

All-Graphene-Contact Electrically Pumped On-Demand Transferrable Nanowire Source

All-Graphene-Contact Electrically Pumped On-Demand Transferrable Nanowire Source

Sub-100 nm Nanolithography and Pattern Transfer on Compound Semiconductor Using Sol-Gel-Derived TiO[sub 2] Resist

Multiple air-gap filters and constricted mesa lasers – material processing meets the front of optical device technology

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