InGaAsP/InGaAs tandem cells for a solar cell configuration with more than three junctions

Szabó, N.; Sagol, B.E.; Seidel, U.; Schwarzburg, Klaus; Hannappel, Thomas

doi:10.1002/pssr.200802141

Cited by 22 publications

(14 citation statements)

References 11 publications

(18 reference statements)

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“…One promising combination of III-V direct band gap semiconductor materials is based on InP lattice constant. 15,16 To date, a three-terminal InP/ InGaAs dual junction cell showed 31.8% efficiency under 50-suns, a promising option for CPV. Here, we report on an optimized band gap combination for a monolithic 3-junction III-V semiconductor solar cell, formed by (1.93 Figure 1(a) shows the band gap energy diagram as a function of lattice constant for various III-V compound semiconductor materials.…”

mentioning

confidence: 99%

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

Leite

Woo²,

Munday

et al. 2013

Applied Physics Letters

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Comparison of light scattering in solar cells modeled by rigorous and scalar approach J. Appl. Phys. 113, 073104 (2013) Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells J. Renewable Sustainable Energy 5, 013117 (2013) Green-tea modified multiwalled carbon nanotubes for efficient poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)/n-silicon hybrid solar cell Appl. Phys. Lett. 102, 063508 (2013) Effect of temperature and concentration on commercial silicon module based low-concentration photovoltaic system J. Renewable Sustainable Energy 5, 013113 (2013) Precipitated iron: A limit on gettering efficacy in multicrystalline silicon

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mentioning

confidence: 99%

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

Leite

Woo²,

Munday

et al. 2013

Applied Physics Letters

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“…InP has a long history as efficient photocathode in water splitting applications . Recently, InP‐based low bandgap tandem solar cells were suggested for multijunction solar cells (MJSCs) with more than three junctions and applied in the current world record four‐junction cell with conversion efficiencies exceeding 46% . Here, InP(100) is of particular interest, since it may be considered as prototype surface regarding H‐based MOVPE processing of phosphides, where hydrogen strongly affects the atomic surface structure compared to UHV preparation.…”

Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

“…A low bandgap tandem (two‐junction) solar cell was suggested almost a decade ago as part of a four‐junction solar cell: This two‐junction tandem as lower part of the four‐junction solar cell consists of an InGaAs bottom cell and InGaAsP top cell, both lattice‐matched to InP, and can be optimized for absorption in the solar infrared spectrum underneath a well‐established GaAs/InGaP top tandem. Such a low‐bandgap tandem is part of the current record efficiency solar cell, and its structure is shown schematically in Figure .…”

Section: Internal Interfaces Of Epitaxial Heterostructuresmentioning

confidence: 99%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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“…InGaAsP is a promising quartenary III-V semiconductor material that can be grown lattice matched to InP. Ge bottom cell of InGaP/GaAs/Ge three-junction solar cells could be replaced with a tandem InGaAsP/InGaAs cell to increase the photovoltaic efficiency [8,9]. We modeled an InGaAsP topcell for such a two junction tandem cell.…”

Section: Ingaasp Thin-film Solar Cellsmentioning

confidence: 99%

Increased cell efficiency in InGaAs thin film solar cells with dielectric and metal back reflectors

Aydın

Leite

Atwater

2009

2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

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Compound single junction and multijunction solar cells enable very high photovoltaic efficiencies by virtue of employing different band gap materials in seriesconnected tandem cells to access the full solar spectrum. Researchers focused on improving the electrical properties of solar cells by optimizing the material growth conditions, however relatively little work to date has been devoted to light trapping and enhanced absorption in III-V compound solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film solar cells by means of numerical modeling. Flat dielectric and metal back reflectors that might be introduced into the solar cell via wafer-bonding, epitaxial lift-off or deposition techniques have been shown to increase the short circuit current and the photovoltaic efficiency of solar cells.

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InGaAsP/InGaAs tandem cells for a solar cell configuration with more than three junctions

Cited by 22 publications

References 11 publications

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Increased cell efficiency in InGaAs thin film solar cells with dielectric and metal back reflectors

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InGaAsP/InGaAs tandem cells for a solar cell configuration with more than three junctions

Cited by 22 publications

References 11 publications

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency &gt;50%

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency &gt;50%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Increased cell efficiency in InGaAs thin film solar cells with dielectric and metal back reflectors

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Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%