InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement

Mito, I.; Kitamura, M.; Kobayashi, K.; Murata, Shigeru; Seki, M.; Odagiri, Y.; Nishimoto, Hiroshi; Yamaguchi, Masayuki

doi:10.1109/jlt.1983.1072079

Cited by 137 publications

(7 citation statements)

References 13 publications

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“…We first discuss the strongly index-guided lasers. Over the last few years, we have fabricated the Channeled Substrate Buried Heterostructure (CSBH), 37 the Etched Mesa Buried Heterostructure (EMBH) 38 · 39 and the Double-Channel Planar Buried Heterostructure (DCPBH) 40 lasers (see Fig. 9).…”

Section: Resultsmentioning

confidence: 99%

Performance Comparison of InGaAsP Lasers Emitting at 1.3 and 1.55 μm for Lightwave System Applications

Dutta

Wilson²,

Wilt

et al. 1985

At&T Technical Journal

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Experimental results relative to the performances of real index-guided InGaAsP lasers emitting near 1.3 and 1.55 μΐη are described and compared. The laser structures discussed are the etched mesa buried heterostructure, channeled substrate buried heterostructure, and the double channel planar buried heterostructure. The effect of Auger recombination and intervalence band absorption on the threshold current and external differential quantum efficiency is discussed. The effect of the larger Auger coefficient at 1.55 μπι is compensated by a lower carrier density at threshold at 1.55 μπι so that the total nonradiative current loss for lasers emitting at 1.55 μπι is not significantly larger than that for lasers emitting at 1.3 μΐη. A small linear shunt leakage current (~10 mA) can increase the T 0 to ~100K. We report threshold currents as low as 11 and 15 mA (at 30°C) and continuous-wave operating temperatures as high as 130 and 110°C for lasers emitting at 1.3 and 1.55 μηι, respectively.

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Section: Resultsmentioning

confidence: 99%

Performance Comparison of InGaAsP Lasers Emitting at 1.3 and 1.55 μm for Lightwave System Applications

Dutta

Wilson²,

Wilt

et al. 1985

At&T Technical Journal

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“…A two-step liquid phase epitaxy was employed to make a double channel planar buried heterostructure (DC-PBH) laser [40]. Fig.…”

Section: Device Fabricationmentioning

confidence: 99%

1.5-µm λ/4-shifted InGaAsP/InP DFB lasers

Akiba¹,

Usami²,

Utaka³

1987

J. Lightwave Technol.

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A single wavelength light source in 1.5-pm range was developed using InGaAsP/InP X/4-shifted distributed feedback (DFB) semiconductor heterostructures. Superiority of the X/4-shifted VFB structure in terms of stability of the main mode at the Bragg wavelength was shown theoretically, in which the threshold, the output, and the polarization characteristics were taken into account. A X/4-shifted corrugated grating was made by a newly developed negative and positive photoresists technique. Buried heterostructure (BH) diode lasers with nonreflective window ends were fabricated and highly stable single-mode operation with a low threshold was obtained reproducibly. Direct modulation properties and life-tests results indicated that the X/4-sbifted DFB lasers could be a reliable single-mode light source ina long span lightwave transmission system in 1.5-pm range. A I. INTRODUCTION RELIABLE single wavelength light source in 1.5-pm range is attracting attention in the field of long span lightwave transmission technique using ultimately low-loss silica-based optical fibers are used [1]-[3]. The use of a Bragg reflection in InGaAsP/InP semiconductor heterostructures with a corrugated waveguide has opened the way toward the realization of the single wavelength light source and extensive work on distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers has been done [4]. DFB and DBR lasers should show the lowest threshold and the largest wavelength selectivity when they operate at the Bragg wavelength, since the Bragg reflection occurs most effectively at the Bragg wavelength. In a DBR laser, carefully designed waveguides are required for that purpose [4]. On the other hand, a DFB laser inherently has a two-mode property [ 5 ] . A phase shift of the corrugation corresponding to a quarter of the lightwave (X/4) breaks the two-mode degeneracy [5] and readily leads to the single-mode operation at the Bragg wavelength [6]-[19]. The same effect was obtained in an active Bragg reflector laser [20], [2 I] and in a DFB laser with a nonuniform stripe width [22], [23].This paper describes superior characteristics of X/4-shifted InGaAsP/InP DFB lasers in 1.5-,urn range from the viewpoints of theoretical design and experimental device performance. First, the stability of the main mode at the Bragg wavelength including the polarization mode was discussed as well as the threshold and the output efficiency using the results obtained from the coupled-mode

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“…Suitable design and fabrication techniques for the active region and the injection current confinement are most important. Typical characteristics, 10-20 mA threshold current and 50-60 percent external quantum efficiency, were achieved in 1.3-pm wavelength DC-PBH LD's [24]. Quantum well (QW) structures have also been investigated to reduce the threshold current density.…”

Section: A Laser Diodesmentioning

confidence: 99%

InGaAsP/InP long wavelength optoelectronic integrated circuits (OEIC's) for high-speed optical fiber communication systems

Suzuki

Kasahara

Shikada

1987

J. Lightwave Technol.

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InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement

Cited by 137 publications

References 13 publications

Performance Comparison of InGaAsP Lasers Emitting at 1.3 and 1.55 μm for Lightwave System Applications

Performance Comparison of InGaAsP Lasers Emitting at 1.3 and 1.55 μm for Lightwave System Applications

1.5-µm λ/4-shifted InGaAsP/InP DFB lasers

InGaAsP/InP long wavelength optoelectronic integrated circuits (OEIC's) for high-speed optical fiber communication systems

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