InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner

Han, Shihui; Ko, Hyunsung; Park, Jeong‐Woo; Kim, Namje; Yoon, Young-Jong; Shin, Jun‐Hwan; Kim, Dae Yong; Lee, Dong Hun; Park, Kyung Hyun

doi:10.1364/oe.21.025874

Cited by 71 publications

(37 citation statements)

References 14 publications

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“…GaAsN Schottky diodes are used in lasers [1], terahertz emitters [2] and optical amplifiers [3] for harsh radiation environments such as spacecrafts, military weapons and nuclear power generation stations. In all these applications devices should be resistant to radiations that can create two significant effects: Ionization damage and generation of free carriers.…”

Section: Introductionmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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Section: Introductionmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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“…We discuss some here. (i) A THz InGaAs Schotky barrier diode array detector with 20 elements is built for real-time, compact and portable scanners in a TPI system [42]. (ii) Another real-time TPI system is built using a palm-size THz camera that contains a microbolometer array and a compact quantum cascade laser (QCL) [52].…”

Section: Thz Pulsed Imaging Systemmentioning

confidence: 99%

Terahertz Pulse Detection Techniques and Imaging Applications

Chen¹,

Guo²

2017

Terahertz Spectroscopy - A Cutting Edge Technology

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Recent years have witnessed successful developments of detection techniques of teraherz (THz) pulse radiation and its imaging applications such as security, medicine and environmental sensing, to name an important few. Progress of detection techniques has been made in many aspects, including detection sensitivity, real-time detection, roomtemperature operation, detection bandwidth and dynamic range, spatial (wavefront) and temporal proiles and so on. New detection techniques utilizing cuting-edge materials, sensors, systems and even novel detection mechanisms contribute to advances in teraherz pulse detection. While detection techniques continuously improve, teraherz pulsed imaging (TPI) also inds broad and intriguing applications. For instance, TPI has shown applications in nondestructive evaluation in pharmaceutics, biomedical characterization of tissues, medical diagnosis of cancers, identiication of explosive hazards and examination of art and archeology. The chapter highlights recent progress of teraherz pulse detection techniques and imaging applications.

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“…Conventional SBD detectors (e.g., GaAs SBDs) for effective power matching, because of high junction resistance, are forward biased though such biasing leads to an additional 1/f noise. For SBDs based on ternary III-V semiconductor alloys (e.g., InGaAs/InP SBDs [20,21]), when Schottky potential barrier is lowered, the impedance at zero bias is much lower, as compared to that in GaAs or Si SBDs.…”

Section: -11mentioning

confidence: 99%

Untitled

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜ opt ) and optical noise equivalent power (NEP opt ) of FETs in the broadband detection regime can achieve ℜ opt ~ 23 kV/W and NEP opt ~ 1⋅10-12 W/Hz 1/2 , respectively. At low radiation frequency ν in the THz spectral region the NEP opt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.

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InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner

Cited by 71 publications

References 14 publications

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Terahertz Pulse Detection Techniques and Imaging Applications

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