InGaAs quantum wire infrared photodetector

Tsai, Chiun-Lung; Cheng, K. Y.; Chou, Shu-Ting; Lin, Shih‐Yen

doi:10.1063/1.2805224

Cited by 21 publications

(12 citation statements)

References 15 publications

(22 reference statements)

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“…5(b) shows a typical variation of the responsitivity when the bias voltage V B is varied in the range 0-1.0 V. As V B was increased up to 1.0 V, the photoresponse increased superlinearly. The enhancement of photocurrent with applied voltage has been commonly observed in a variety of low-dimensional mesoscopic IR detectors designed to be used in either (i) lateral transport [29], where the charge carriers are three dimensionally confined in a similar way carriers are bound to impurities, or (ii) vertical transport [30,31], where the free carriers have to go through the barrier material to reach the conduction channel.…”

Section: Resultsmentioning

confidence: 99%

MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

Lachab¹,

Khanna²,

Harrison³

et al. 2010

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

Lachab¹,

Khanna²,

Harrison³

et al. 2010

Journal of Crystal Growth

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“…Infrared photodetectors based on quantum wires and quantum dots have been studied extensively in the last decade [1][2][3][4][5]. The advantages of quantum dots and quantum wire based detectors over quantum well based detectors have also been studied in great detail.…”

Section: Introductionmentioning

confidence: 99%

IR photodetector based on rectangular quantum wire in magnetic field

Jha¹

2014

AIP Conference Proceedings

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Electron and hole states and the exciton diamagnetic shifts in an InAs/InP rectangular quantum wire in a magnetic field Electron energy levels for a finite rectangular quantum wire in a transverse magnetic field J. Appl. Phys. 98, 053710 (2005); Abstract. In this paper we study rectangular quantum wire based IR detector with magnetic field applied along the wires. The energy spectrum of a particle in rectangular box shows level repulsions & crossings when external magnetic field is applied. Due to this complex level dynamics, we can tune the spacing between any two levels by varying the magnetic field. This method allows user to change the detector parameters according to his/her requirements. In this paper, we numerically calculate the energy sub-band levels of the square quantum wire in constant magnetic field along the wire and quantify the possible operating wavelength range that can be obtained by varying the magnetic field. We also calculate the photon absorption probability at different magnetic fields and give the efficiency for different wavelengths if the transition is assumed between two lowest levels.

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“…The ternary III-V compounds In x Ga 1−x As (0 < x < 1) with features such as relatively high carrier density, wide direct band gap ranging from 0.35 to 1.42 eV, high reliability and radiation resistance [1][2][3][4][5], have wide applications in short-wave infrared photodetectors [6][7][8][9] and solar cells [10,11]. Particularly, high indium content In x Ga 1−x As (x = 0.82) detectors with a cut-off wavelength of more than 2 µm applied in aerospace imaging (such as earth observation, remote sensing and environmental monitoring, etc.)…”

Section: Introductionmentioning

confidence: 99%

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

et al. 2017

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Abstract:In order to reduce the dislocation density and improve the performance of high indium content In 0.82 Ga 0.18 As films, the design of double buffer layers has been introduced into the In 0.82 Ga 0.18 As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In 0.82 Ga 0.18 As/InP heterostructure. The epitaxial layers and buffer layers were grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. In this study, the surface morphology and microstructures of the heterostructure were investigated by SEM, AFM, XRD and TEM. The residual strains of the In 0.82 Ga 0.18 As epitaxial layer in different samples were studied by Raman spectroscopy. The residual strain of the In 0.82 Ga 0.18 As epitaxial layer was decreased by designing double buffer layers which included an InP layer; as a result, dislocations in the epitaxial layer were effectively suppressed since the dislocation density was notably reduced. Moreover, the performance of In 0.82 Ga 0.18 As films was investigated using the Hall test, and the results are in line with our expectations. By comparing different buffer layer structures, we explained the mechanism of dislocation density reduction by using double buffer layers, which included a thin InP layer.

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InGaAs quantum wire infrared photodetector

Cited by 21 publications

References 15 publications

MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

IR photodetector based on rectangular quantum wire in magnetic field

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

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