InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature

Park, G.; Shchekin, O.B.; Huffaker, Diana L.; Deppe, D.G.

doi:10.1049/el:20000909

Cited by 35 publications

(9 citation statements)

References 6 publications

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“…In spite of these predictions most of the devices realized so far have shown a temperature dependence similar to the one obtained on InP based QWs for 1.3 m emission, with laser characteristic temperature T 0 smaller than 100 K in the 20-80°C interval. [3][4][5][6] Higher T 0 has been obtained in lasers based on p-doped QDs, but at the expense of higher room-temperature ͑RT͒ threshold current density. [7][8][9] To explain the temperature sensitivity of QD lasers, different mechanisms have been proposed in the literature.…”

Section: Introductionmentioning

confidence: 99%

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Rossetti

Fiore

Sęk

et al. 2009

Journal of Applied Physics

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A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 m is reported. The temperature dependence of carrier lifetime, radiative efficiency, threshold current, differential efficiency, and gain is measured, and compared to the theoretical results based on a rate equation model. The model accurately reproduces all experimental laser characteristics above room temperature. The degradation of laser characteristics with increasing temperature is clearly shown to be associated to the thermal escape of holes from the confined energy levels of the dots toward the wetting layer and the nonradiative recombination therein.

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Section: Introductionmentioning

confidence: 99%

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Rossetti

Fiore

Sęk

et al. 2009

Journal of Applied Physics

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“…Applications of semiconductor quantum dots (QDs) in optoelectronic devices rely on fast carrier scattering processes towards and between the discrete confined levels. These carrier transitions determine the dynamics of QD luminescence [1] or the operation of QD lasers [2,3]. For low carrier densities, where Coulomb scattering can be neglected, carrier-phonon interaction provides the dominant scattering channel.…”

Section: Introductionmentioning

confidence: 99%

Polarons in semiconductor quantum dots and their role in the quantum kinetics of carrier relaxation

et al. 2005

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While time-dependent perturbation theory shows inefficient carrier-phonon scattering in semiconductor quantum dots, we demonstrate that a quantum kinetic description of carrier-phonon interaction predicts fast carrier capture and relaxation. The considered processes do not fulfill energy conservation in terms of free-carrier energies because polar coupling of localized quantum-dot states strongly modifies this picture.

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“…The realization of QD devices with ultralow threshold currents [1] indicates effective state filling, which opens for the potential of making ultrafast QD devices. The two key features necessary in such devices are high differential gain and fast carrier relaxation into the active states.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Berg

Bischoff

Magnúsdóttir

et al. 2001

IEEE Photon. Technol. Lett.

221

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. Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices. I E E E Photonics Technology Letters, 13(6) Abstract-Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The QD excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a QD amplifier is found to be limited by the wetting-layer dynamics.Index Terms-Gain recovery, quantum-dot amplifiers, ultrafast.

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InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature

Cited by 35 publications

References 6 publications

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Polarons in semiconductor quantum dots and their role in the quantum kinetics of carrier relaxation

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

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