InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 Band k · p theory

Abstract

8 band ⃗ ⋅ ⃗ method is used to calculate subband structures of InGaAs inversion layers accounting for strong coupling between conduction and valence bands around Γ point as well as quantum confinement. Inversion layer mobility is computed employing Kubo-Greenwood formalism. Scatterings due to acoustic phonons, polar optical phonons, ionized impurities, interface fixed charges, surface roughness, and alloy disorder are included. The simulated low-field electron mobility results are in good agreement with in-house experimental data with and without an InP capping layer.