Abstract:We present a new InGaAs/InP Single-Photon Avalanche Diode (SPAD) with high detection efficiency and low noise, which has been employed in a sinusoidal-gated setup to achieve very low afterpulsing probability and high count rate.The new InGaAs/InP SPAD has lower noise compared to previous generations thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. A detector with 25 μm active-area diameter, operated in gated-mode with ON time of tens of nanoseconds, has a d… Show more
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