InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range

Yu, Li; Yuan, Weifang; Li, Ke; Duan, Xiaofeng; Li, Kai; Huang, Yongqing

doi:10.3788/col202220.022503

Cited by 7 publications

(4 citation statements)

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“…The band gap of InAlGaAs is 0.99 eV, which can better smooth the band gap between the InAlAs and InGaAs layer. Table 1 shows the material parameters of InGaAs, InAlGaAs and InAlAs 10,11 . Selberherr's parameters An, Ap cm -1 7×10 5 , 6.7×10 5 6.2×10 7 , 1×10 6 6.2×10 7 , 1×10 6 Selberherr's parameters Bn, Bp V/cm 1.2×10 6 , 2×10 6 4×10 6 , 4×10 6 4×10 6 , 4×10 6 Selberherr's parameters β…”

Section: Theorymentioning

confidence: 99%

Optimization of multi-stage avalanche photodiode structure based on InGaAs/InAlAs

du,

Han,

Guan

et al. 2024

Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Detector Technologies

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Avalanche photodiodes (APD) can amplify the photoelectric signal based on the avalanche multiplication effect of carrier to improve the sensitivity of detection. They have the characteristics of low noise and high gain, so they are suitable for long-distance optical communication. In this work, a multi-stage avalanche photodiode structure with SAGCM (Separated Absorption, Grading, Charge and Multiplication region) is proposed based on Impact Ionization Engineering (I2E). The photocurrent, dark current, electric field, gain and noise characteristics of InGaAs/InAlAs avalanche photodiodes are studied by optimizing the grading layer's thickness and doping concentration. According to the final simulation results, the optimized avalanche photodiodes has low excess noise. At 60 V voltage and 300 K temperature, the noise factor k value (the ratio of impact ionization coefficients) of the five-stage APD is 0.012, and the gain can reach 430.

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Section: Theorymentioning

confidence: 99%

Optimization of multi-stage avalanche photodiode structure based on InGaAs/InAlAs

du,

Han,

Guan

et al. 2024

Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Detector Technologies

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show abstract

“…With the saturation of the internal current, a large number of carriers accumulate at the end of the depletion layer, forming space charges that neutralize the depletion layer's charges, resulting in a decrease in the electric field intensity in the multiplication region and a reduction in the impact ionization rate. Subsequent studies have analyzed this principle and the issue of linearity improvement [17][18][19], but mainly within one-dimensional (1D) ideal scenarios; thus, in-depth explorations regarding more complex situations or comparative analyses are lacking. We compared the linearity differences between APDs closely resembling actual and ideal structures via simulations and revealed a remarkable decrease in linearity for APDs close to the actual device (Figure 2).…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, our findings demonstrate that employing 1D simulation and neglecting differences in electrode size may lead to linearity overestimation. This situation occurred in some studies that used simulation methods [ 17 , 18 , 19 ]. These simulation methods adopt a 1D simulation approach, in which a three-dimensional structure is abstracted into a 1D line, thereby overlooking lateral variations in the device.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Linearity of Light Response in Avalanche Photodiodes by Suppressing Electrode Size Effect

Gan,

Yu,

Wang

2024

Sensors

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The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex phenomena encountered in actual device structures. In this study, actual APD structures exhibiting lower linearity than their ideal counterparts were revealed. Simulation analysis and physical inference based on GaN APDs reveal that electrode size is a noteworthy factor influencing response linearity. This discovery expands the nonlinear theory of APDs, suggesting that APD linearity can be enhanced by suppressing the electrode size effect. A physical model was developed to explain this phenomenon, which is attributed to charge accumulation at the edge of the contact layer. Therefore, we proposed an improved APD design that incorporates an additional gap layer and a buffer layer to stabilize the internal gain under high-current-density conditions, thereby enhancing linearity. Our improved APD design increases the linear threshold for optical input power by 4.46 times. This study not only refines the theoretical model for APD linearity but also opens new pathways for improving the linearity of high-speed optoelectronic detectors.

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“…With the recent rapid development of driverless cars, the need of lidar is attracting researchers' attention again. As an important component of lidar detection [1] , compared with other materials [2][3][4] , silicon avalanche photodiode (APD), especially APD arrays, is the commonly used device for photon detection at visible light and near-infrared wavelengths (λ < 1100 nm) [5] because of its high gain factor [6,7] , high speed [1,8,9] , low dark current, low cost [10] , and low noise [11] . Additionally, APD is also one of the best choices for topographic monitoring and aerospace [12] because of the reliability and stability of silicon.…”

Section: Introductionmentioning

confidence: 99%

High-uniformity 2 × 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology

et al. 2023

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In this paper, high-uniformity 2 × 64 silicon avalanche photodiode (APD) arrays are reported. Silicon multiple epitaxy technology was used, and the high performance APD arrays based on double-layer epiwafers are achieved for the first time, to the best of our knowledge. A high-uniformity breakdown voltage with a fluctuation of smaller than 3.5 V is obtained for the fabricated APD arrays. The dark currents are below 90 pA for all 128 pixels at unity gain voltage. The pixels in the APD arrays show a gain factor of larger than 300 and a peak responsivity of 0.53 A=W@M = 1 at 850 nm (corresponding to maximum external quantum efficiency of 81%) at room temperature. Quick optical pulse response time was measured, and a corresponding cutoff frequency up to 100 MHz was obtained.

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InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range

Cited by 7 publications

References 0 publications

Optimization of multi-stage avalanche photodiode structure based on InGaAs/InAlAs

Optimization of multi-stage avalanche photodiode structure based on InGaAs/InAlAs

Enhancing Linearity of Light Response in Avalanche Photodiodes by Suppressing Electrode Size Effect

High-uniformity 2 × 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology

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