InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate

Leuther, A.; John, Laurenz; Iannucci, R.; Christoph, Tim; Aidam, R.; Merkle, Thomas; Tessmann, A.

doi:10.23919/eumc48046.2021.9337957

Cited by 6 publications

(5 citation statements)

References 5 publications

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“…GaAs is one of the most popular due to its higher saturated electron velocity and higher electron mobility than silicon which operate at frequencies higher 250 Ghz. Moreover, it provides better electrical isolation between components and minimizes the transmission losses in the circuit [19]. For the design of suitable compact coplanar waveguide MMIC amplifier, GaAs pHEMT can be utilized as the optimized schematic model [20].…”

Section: Literature Review and Problem Statementmentioning

confidence: 99%

Characterization of high impedance of multilayer coplanar waveguide transmission line design for integration with nanodevices

Nurzhaubayeva

Chezhimbayeva

Haris

2022

EEJET

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Terahertz technology has recently attracted the attention of the researchers due to its wide range of applications such as security and military, biomedicine and health care, astronomy and biology. There are many scrutinized research papers among the terahertz applications with nanodevices such as self-switching devices. They need monolithic microwave integrated circuits for integration. It is evident that the system impedance of transmission lines is 50 Ω. However, the main limitation of self-switching diodes is high level of impedance in megaohms which is a huge value and is not so easy to implement. Paper focuses on the design and simulation of the coplanar waveguide transmission line structures with higher impedance by applying multilayer technology for the integration with self-switching diodes. Using multilayer technology in design allows wide range of impedances. Two approaches have been targeted such that meets all the requirements of integration with nanodevice. First approach is a widening the gap of the polyimide dielectric layers used in the fabrication of these components. Several design structures have been considered such as positioning the location of signal and grounds contacts with respect to the position of the dielectric layers. As the result the highest characteristic impedance of about 90 Ω was achieved at operating frequency of 110 GHz. Secondly, novel coplanar waveguide transmission line structure was investigated where the V – shape structure was joined with the signal elevated structure. The terahertz application research may effect on high data transmission rate of no less than 10 GBit/s and thereby in increase of traffic volume.

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Section: Literature Review and Problem Statementmentioning

confidence: 99%

Characterization of high impedance of multilayer coplanar waveguide transmission line design for integration with nanodevices

Nurzhaubayeva

Chezhimbayeva

Haris

2022

EEJET

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“…The TMIC amplifiers described in this letter are implemented in an advanced transferred-substrate InGaAs-channel HEMT technology with 20-nm gate length [5]. The inverted HEMT heterostructure is grown by molecular beam epitaxy (MBE) on 100-mm semi-isolating GaAs wafers and transferred to silicon substrates by using a SiO 2 -based wafer bond process with subsequent wafer thinning and removal of the GaAs substrate (see Fig.…”

Section: Technologymentioning

confidence: 99%

“…Thus, only a 100-nm-thick III-V heterostructure layer is remaining on the Si substrate. This advanced transferred-substrate technology also offers the implementation of HEMT devices with backside gate or field plate [5]. This feature, however, is not utilized in the circuits described in this work.…”

Section: Technologymentioning

confidence: 99%

“…This letter describes the development of 670-GHz amplifier circuits that are realized in a 20-nm InGaAs-on-Insulator (InGaAs-OI) HEMT technology, including the transfer to a Silicon substrate after the epitaxial growth of the InGaAs-channel HEMT structure [5]. Previously reported transferred-substrate TMIC amplifiers have demonstrated up to 19 dB of gain around 570 GHz, using a 200-nm InP HBT technology on SiC [6].…”

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confidence: 99%

“…includes an improved pinch-off behavior as well as enhanced device figures such as breakdown voltage, intrinsic gain, and cutoff frequencies. Furthermore, short-channel effects such as drain-induced barrier lowering are possibly reduced and the III-V compound semiconductor material content is cut down by a factor of 10 6 [5]. Two transferred-substrate TMIC amplifiers are reported, based on devices in cascode configuration.…”

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confidence: 99%

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High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology

John

Tessmann

Leuther

et al. 2022

IEEE Microw. Wireless Compon. Lett.

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In this letter, we report on the development of highgain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a nine-stage amplifier circuit are described, which are based on gain cells in cascode configuration. With more than 30 dB of measured gain in the frequency band of 660-700 GHz, the highest frequency of operation of transferred-substrate THz amplifiers is reported. These gain levels in excess of 30 dB, furthermore, correspond to the highest reported gain values and state-of-theart performance around the targeted 670-GHz frequency band.

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