InGaAs/GaAsP quantum wells for hot carrier solar cells

Hirst, Louise C.; Fürher, Markus; Farrell, Daniel; Bris, Arthur Le; Guillemoles, Jean‐François; Tayebjee, Murad J. Y.; Clady, R.; Schmidt, Timothy W.; Sugiyama, Masakazu; Wang, Yunpeng; Fujii, Hiromasa; Ekins-Daukes, N. J.

doi:10.1117/12.910581

Cited by 26 publications

(9 citation statements)

References 17 publications

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“…Increase in In content to make the wells deeper and to reduce the degree of confinement is seen to increase the effective carrier temperatures. 15 And extraction of a small portion of this nonequilibrium hot carrier population as a very small external current at low temperatures is demonstrated for a single InGaAs QW by Hirst. 16 The mechanisms for the reduced carrier cooling rate in these MQW systems are not yet clear.…”

Section: Slowed Carrier Cooling In Mqwsmentioning

confidence: 99%

Hot carrier solar cell absorbers: materials, mechanisms and nanostructures

et al. 2014

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The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells.

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Section: Slowed Carrier Cooling In Mqwsmentioning

confidence: 99%

Hot carrier solar cell absorbers: materials, mechanisms and nanostructures

et al. 2014

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“…In fact, it may well be that the effects are enhanced in such nanowells as compared to full QWs due to the former's greater density of states and in particular their greater ratio of density of electronic to phonon states that will enhance the phonon bottleneck for emitted phonons. The fact that the deeper and hence less-confined wells in [Hirst et al, 2012] show higher carrier temperatures is tentative evidence to support the hypothesis that nanowells without quantum confinement are all that are required. Whilst several other effects might well be present in these MQW systems, further work on variation of nanowell and barrier width and comparison between material systems, will distinguish which of these reduced carrier diffusion, phonon confinement or phonon folding mechanisms might be dominant.…”

Section: Hot-carrier Cellsmentioning

confidence: 58%

“…This is due to an enhanced 'phonon bottleneck' in the MQWs allowing the threshold intensity at which a certain ratio of LO phonon reabsorption to emission is reached that allows maintenance of a hot-carrier population, to be reached at a much lower illumination level. More recent work on strain-balanced InGaAs/GaAsP MQWs by [Hirst et al, 2011;Hirst et al, 2012] has also shown carrier temperatures significantly above ambient, as measured by PL. Increase in In content to make the wells deeper and to reduce the degree of confinement is seen to increase the effective carrier temperatures.…”

Section: Hot-carrier Cellsmentioning

confidence: 99%

Third‐Generation Solar Cells

Conibeer

2014

Solar Cell Materials

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“…More recent work on strain balanced InGaAs/GaAsP MQWs by Hirst et al [36] has also shown carrier temperatures significantly above ambient, as measured by photoluminescence. Increase in In content to make the wells deeper and to reduce the degree of confinement is seen to increase the effective carrier temperatures [37].…”

Section: Slowed Carrier Cooling In Mqwsmentioning

confidence: 97%