InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs

Achouche, M.; Glastre, G.; Caillaud, Christophe; Lahrichi, M.; Chtioui, Mourad; Carpentier, D.

doi:10.1109/jphot.2010.2050056

Cited by 17 publications

(11 citation statements)

References 13 publications

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“…For conventional APDs, the excess noise factor is relatively high when the gain is large, since the effective ionization ratio k is not very low, such as InGaAs/InAlAs APD [7]. So the receiver sensitivity of the conventional APDs in DD system cannot be very high.…”

Section: Discussionmentioning

confidence: 99%

“…Since the superior sensitivity is very important for FSO communications that belong to unamplified applications, the detectors of the receivers almost all employ APDs in intensity modulation/DD systems because of their high internal gain [6]. However, as the channel bandwidths rise, conventional APDs increasingly fail to provide the desired signal gain owing to the gain-bandwidth product limit [7], [8]. So the ability to support high gain-bandwidth products is becoming increasingly important for APDs.…”

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confidence: 99%

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Design of a Coherent Receiver Based on InAs Electron Avalanche Photodiode for Free-Space Optical Communications

Wen

Zhao

Gao

et al. 2015

IEEE Trans. Electron Devices

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In this paper, a coherent receiver based on InAs electron avalanche photodiode (e-APD) is designed for free-space optical (FSO) communications. According to the numerical simulations, it is found that the coherent receiver based on InAs e-APD can operate nearly in its shot-noise limit condition with a lower local oscillator (LO) power than traditional coherent receivers and get a better sensitivity improvement due to the gain provided by the coherent gain from the LO power and the internal gain of the e-APD. Hence, the multiple diversity receiver systems can be easier implemented and the number of the independent beams can be increased. In addition, this system is not sensitive to the change of the thermal noise of the coherent receiver and the dark current of the InAs e-APD that makes it more suitable for space environment. Furthermore, as the requirement of the internal gain for the InAs e-APD in this type of coherent receiver is not very high, the depletion region of InAs e-APD can be reduced. Hence, the coherent receiver based on InAs e-APD may become a potential choice in much higher speed FSO communication applications.Index Terms-Coherent receiver, free-space optical (FSO) communications, InAs electron avalanche photodiode (e-APD), multiple diversity receivers.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Design of a Coherent Receiver Based on InAs Electron Avalanche Photodiode for Free-Space Optical Communications

Wen

Zhao

Gao

et al. 2015

IEEE Trans. Electron Devices

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“…Among the photodiode portfolio, APDs are attractive devices due to the signficiant improvement in photoreceiver sensivity compared with traditional p-i-n (PIN) photodiodes (Achouche et al, 2010). By adding the multiplication layer, the avalanche photodiodes combine the detection and amplification properties simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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Avalanche photodiodes (APDs) are important building blocks for high-sensivity, low-noise receivers deployed in the datacenter, wireless and cloud computing networks. Maintaining stable dark current is a crucial task for overall robust sysem reliability. To achieve design-in low dark current stability, good knowledge of reliability physics is indispensable. In this work, we study the physical mechanisms of 10G/25G mesa-type APD degradation. We institute a predictive reliability model to account for the degradation processes. A comprehensive comparison of APD and IC transistor is also illustrated in terms of dielectric breakdown, mobile ion migration and hot carrier injection. The model suggests that surface leakage current is the dominant factor for the mesa-type APD degradation. Based on the model, it is predicted that highly reliable 10G/25G APD can be achieved with the suppression of weak links at the surface/interface states.

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“…Broadband and high-output-power photodiodes (PDs) are considered the key optical-toelectrical signal interface devices for future high-frequency and high-power fiber-optic systems, such as millimeter-wave photonic gigabit communication systems and high-speed coherent optical communication systems [1][2][3]. For conventional PDs, the speed performance is substantially limited by the inherent trade-off between the saturation current (related to the output power) and the resistance-capacitance (RC) limited bandwidth [2][3][4]. To overcome this problem, the uni-traveling-carrier PD (UTC-PD) was proposed [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…For conventional PDs, the speed performance is substantially limited by the inherent trade-off between the saturation current (related to the output power) and the resistance-capacitance (RC) limited bandwidth [2][3][4]. To overcome this problem, the uni-traveling-carrier PD (UTC-PD) was proposed [3][4][5][6]. Because only electrons are the active carriers in the UTC-PD, the slow hole transport is eliminated and the bandwidth and saturation-current performance is improved.…”

Section: Introductionmentioning

confidence: 99%

Design of broadband and high-output power uni-traveling-carrier photodiodes

Zhang¹,

Hraimel²,

Li³

et al. 2013

Opt. Express

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In this paper, physically-based simulations are carried out to investigate and design broadband and high-output power uni-traveling carrier (UTC) photodiodes. The physical model is first verified by comparison to experimentally measured results. The graded-bandgap structure, which can induce potential gradient, is considered to be used in the absorption layers. It is shown that the electric field in the absorption layer is increased by the gradient, thus the performance of bandwidth and saturation current is improved by 36.6% and 40% respectively for our considered photodiode. Moreover, a modified graded-bandgap structure is proposed to further increase the electric field, and an additional 9.5% improvement in bandwidth is achieved. The final proposed UTC-PD structures will result in 399-GHz bandwidth and 49-mA DC saturation current.

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InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs

Cited by 17 publications

References 13 publications

Design of a Coherent Receiver Based on InAs Electron Avalanche Photodiode for Free-Space Optical Communications

Design of a Coherent Receiver Based on InAs Electron Avalanche Photodiode for Free-Space Optical Communications

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Design of broadband and high-output power uni-traveling-carrier photodiodes

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