InGaAs-based planar barrier diode as microwave rectifier

Abstract

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current-voltage characteristics; thus it can be used as a rectifying device. The PBD's working principle is explained using thermionic emission theory. Furthermore, by varying the PBD's geometric design, the asymmetry of the current-voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V %1 at a low DC bias voltage of 50 mV.

Omega‐Gate Silicon Nanowire Geometric Diodes with Reconfigurable Self‐Switching Operation and THz Rectification

“…One difference is that maximum depletion is observed under reverse bias for the planar SSD and under zero bias for the SSGD, although the SSGD trend is consistent with “V‐shaped” SSDs [ 25 ] and planar barrier diodes. [ 51,52 ] In addition, the magnitude of depletion between the two devices differs by ≈4 orders of magnitude, as apparent by a comparison of the color bar axis limits in Figure 4A. This difference originates from the modulated dopant profile in the SSGD compared to the uniform dopant profile in the planar SSD, causing the NW SSGD to have a greater magnitude of n within the channel for carrier transport under forward bias.…”

“…One difference is that maximum depletion is observed under reverse bias for the planar SSD and under zero bias for the SSGD, although the SSGD trend is consistent with "V-shaped" SSDs [25] and planar barrier diodes. [51,52] In addition, the magnitude of depletion between the two devices differs by ≈4 orders of magnitude, as apparent by a comparison of the color bar axis limits in Figure 4A. This difference originates from the modulated dopant profile in the SSGD compared to the uniform dopant profile in the planar SSD, causing the NW SSGD to have a greater A) Electron concentration, n, under zero (V app = 0 V), forward (V app = −1 V), and reverse (V app = 1 V) biases applied to the righthand side of an n-type Si SOI SSD device [10] (left; scale bar, 1 μm) and an n-type Si NW SSGD device (right; scale bar, 150 nm) in grounding configuration 1 at V g = −0.7 V. B) Semi-logarithmic I-V curves for the NW SSGD device (yellow) corresponding to the structures in panel A and planar SSD device (black) assuming a Si thickness of 205 nm.…”

Silicon Self-Switching Diode (SSD) as a Full-Wave Bridge Rectifier in 5G Networks Frequencies

“…SSDs have received attention from researchers worldwide as they have been reported to effectively function as zero-bias RF detectors [8,18]. The rectification property of the SSD is similar to a pn junction diode, with simplicity in fabrication process where it can be simply realized by one-step lithography process and chemical etching, and does not involve junctions, doping, or third gate terminal [19]. In SSD, a pair of L-shaped trench are etched between two electrodes, resulting in depletion region in between the etched region (air) and silicon [20].…”

The effect of oxidation temperature on the thermoelectric performance of a plate-type thermoelectric power generator

“…Various environmental energies are available for energy harvesting, for example vibration, [16][17][18] heat, [19][20][21] light, [22][23][24] electromagnetic waves [25][26][27] and so on. Heat is one of the energy sources that can be easily accessed in our daily lives; the human body, electric devices and automobiles are all examples of familiar heat sources.…”