InGaAs-based Graded Gap Active Elements with Static Cathode Domain for Terahertz Range

Botsula, O. V.; Prykhodko, K. H.; Zozulia, V. O.

doi:10.21272/jnep.11(1).01006

Cited by 7 publications

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“…A Gunn diode made from GaAs with the graded-gap AlGaAs cathode, with 1 m long active zone shows a maximum output power of 23 mW at 98 GHz [16]. Noteworthy is the research [13], in which the inverse distribution of the composition of graded-gap GaInAs was used, namely GaInAs -GaAs for a diode placed in a resonator. The efficiency of such diode was low.…”

Section: Analysis Of Resultsmentioning

confidence: 99%

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Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

Storozhenko¹,

Sanin²

2022

J. Nano- Electron. Phys.

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The paper studies the characteristics of Gunn diodes based on graded-gap GaInPAs semiconductor. Gunn diodes are active elements for generating electromagnetic waves in the millimeter and submillimeter ranges. Nowadays, providing modern equipment with active sources of the subterahertz range is an urgent task. It can be implemented by increasing Gunn diodes power and cutoff frequencies of generation. One of the means to increase the cutoff frequency of Gunn diodes is the use of graded-gap semiconductors. The dependence on the coordinate of many parameters of a graded-gap semiconductor affects the processes that occur in the Gunn diode based on the graded-gap semiconductor. Therefore, it is very important to optimize the diode structure by both the doping level and varying the fraction parts of the graded-gap alloy. The paper presents the results of modeling the operation of Gunn diodes with an active zone length of 1 μm based on graded-gap GaPAs -GaInAs alloy at different lengths of the graded-gap layer, different fraction parts of In and P and different electron densities in the active zone. The power spectra of self-oscillations (in the absence of a resonator) of Gunn diodes are obtained, the analysis of physical processes is performed, the optimal lengths of the graded-gap semiconductor layer and optimal mole fractions of In and P are found to obtain the highest power and oscillation frequency. For diodes with an electron density in the active zone of 6×10 16 cm -3 , Ga0.67P0.33As -Ga0.5In0.5As has the greatest oscillation power at the layer length of the graded-gap compound equal to 0.2 m. This diode provides an RF power of 11.28 mW at 102.5 GHz for the fundamental harmonic and 49 W (307.5 GHz) for the third harmonic.

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Section: Analysis Of Resultsmentioning

confidence: 99%

“…Current oscillations in the 01027-4 diode occur at any mole fraction of In. If the mole fraction of In is greater than 0.6, then the intervalley electron transfer effect is overlapped by impact ionization [12][13][14]. Impact ionization is considered a negative effect for transfer electron devices.…”

Section: Optimal Fractional Composition Of Gainasmentioning

confidence: 99%

Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

Storozhenko¹,

Sanin²

2022

J. Nano- Electron. Phys.

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“…In this way, the magnitude of the electric field corresponding to the impact ionization threshold is low, which provides a small region of strong electric field and higher operation frequencies. An example of such structures is In-GaAs/GaAs-based diodes considered in [14]. It is shown that the diodes have better magnitude of NPSD in the THz frequency region compared to GaAs-based diodes, whose composition is uniform.…”

Section: Introductionmentioning

confidence: 99%

Features of Noise Generation in Graded-Gap III Nitride-based Diodes

Prykhodko¹,

Plaksin²

2022

J. Nano- Electron. Phys.

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The paper reports the result of our research on graded-gap diodes with a cathode static domain as possible noise sources for different modern applications based on the use of THz wave frequencies. Such diodes represent a two-terminal n + -n  -nn + structure containing a cathode graded-gap layer with a band gap that increases from the cathode contact towards the n-region. We study GaN and AlN based diodes with InzGa1-zN and InzAl1-zN based graded-gap layers, respectively. It is shown that the localization of a strong electric field and low values of impact ionization threshold can be achieved by using a graded-gap layer with a narrow-gap material on the cathode. The diode simulation is performed using ensemble Monte Carlo technique. Noise generation is investigated numerically with time sampling of electric current over the time domain. The influence of scattering mechanisms acting on charge carriers on the noise properties of the diode is explored. Analyzing the noise power spectral density (NPSD), it is found that maximum NPSD can be observed in GaN diodes with InzGa1-zN layer, and the NPSD magnitude depends both on the size of the n --region (at a fixed diode length) and on the position of the graded-gap layer with respect to the end of the high resistance region (n -). It is established that polar phonon scattering and alloy-disorder scattering are the main mechanisms affecting the noise properties of the diodes. It is shown that the diodes demonstrate bias voltage regions where the dependence of NPSD on bias voltage is linear, and the value of NPSD increases by an order of magnitude.

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Diode on Based Graded GaPAs-GaInAs as High Power Source of Millimeter Wave

Storozhenko

2021

2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek)

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InGaAs-based Graded Gap Active Elements with Static Cathode Domain for Terahertz Range

Cited by 7 publications

References 0 publications

Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

Features of Noise Generation in Graded-Gap III Nitride-based Diodes

Diode on Based Graded GaPAs-GaInAs as High Power Source of Millimeter Wave

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