2018
DOI: 10.1088/1361-6528/aad66e
|View full text |Cite
|
Sign up to set email alerts
|

Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes

Abstract: Germanium-Tin (GeSn) alloys have attracted great amounts of attention as these group IV semiconductors present direct band-gap behavior with high Sn content and are compatible with current complementary metal oxide semiconductor technology. In this work, three dimensional tubular GeSn/Ge micro-resonators with a diameter of around 7.3 μm were demonstrated by rolling up GeSn nanomembranes (NM) grown on a Ge-on-insulator wafer via molecular beam epitaxy. The microstructural properties of the resonators were caref… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
12
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
5
1

Relationship

3
3

Authors

Journals

citations
Cited by 12 publications
(12 citation statements)
references
References 56 publications
0
12
0
Order By: Relevance
“…In this regard, recent attempts focused on amorphous GeSn [ 49 ] and rolled‐up GeSn/Ge membranes. [ 50 ] However, their demonstrated performance was limited to the visible‐NIR range due to the low Sn content.…”
Section: Introductionmentioning
confidence: 99%
“…In this regard, recent attempts focused on amorphous GeSn [ 49 ] and rolled‐up GeSn/Ge membranes. [ 50 ] However, their demonstrated performance was limited to the visible‐NIR range due to the low Sn content.…”
Section: Introductionmentioning
confidence: 99%
“…Photoluminescence (PL) spectrum elucidates the whispering gallery modes in the microresonator, of which the Q factor over 250 was obtained 19 . Although this is a very primary presentation in optics, further investigation and improvement of the deterministic delamination method for rolling microstructures would provide more complex structures with fruitful optical properties in advanced optical applications 5052 .…”
Section: Resultsmentioning
confidence: 99%
“…XOI system can also be integrated with the above MBE growth. For instance, GeSn/Ge microresonators have been epitaxially grown on Ge‐on‐insulator wafer . GeSn is another semiconductor material for photonic devices with tunable bandgap from 0 to 0.8 eV, and the rolled‐up tubes further demonstrated pronounced resonant behavior …”
Section: Release Methodsmentioning
confidence: 99%