Infrared transmission spectra of Cd1−xZnxTe (x = 0.04) crystals

Laser-induced increase of resistivity and improvement of optical properties of CdZnTe crystal

“…The first is the decrease of the charge carrier mobility and the second is the decrease of the free charge carrier concentration. Qualitatively, this effect can be estimated by a change in the optical transmission spectra of the crystal [11]. The origin of the increase of resistivity was identified by the comparison of IR spectra before and after irradiation by the laser.…”

“…It is known that the absorption in the 8-20 mm range of the IR spectra is primarily determined by the free charge carrier absorption. The absorption of LR by free charge carriers is mainly caused by the presence of the uncompensated electrically active residual impurities and V Cd [11][12][13][14].…”

Zn1−xMgxTe and P:Zn1−xMgxTe (x = 0.06–0.25) bulk crystals grown by travelling Te solution method

“…The high IR transmittance of the middle wafers indicates that the lowconcentration defects, such as Te inclusions, precipitates and point defects, are contained in the as-grown Zn 1−x Mg x Te crystals. 30,31 There are few point defects in the crystal, and the electron or hole scattering effect is small, which is beneficial to the transport process of carriers, improves carrier mobility, and is beneficial to obtain excellent electrical properties.…”

Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

“…12,13 It has been shown that transmission levels are decreased by Te precipitates/inclusions, and higher transmission levels can be achieved in precipitate-free substrates. [14][15][16] A map of the transmission at k = 500 cm −1 can be seen in Fig. 3b.…”