“…First experiments have been focused on hot spot monitoring with scanning methodologies [24] or MIC's [25] to extract FoM calibration-free parameters in LNA's and PA's (i.e., power gain central frequency [24] or 3dB bandwidth [24], [25] implement heterodyne strategies over other solutions [18], [22], [23], [26], as the power dissipated by transistors or other IC parts inherently mixes current and voltage signals by Joule effect. To acquire in SoC's single-shot thermal images, InfraRed (IR) thermography is a good candidate, as frequencymodulated hot spots can be studied by lock-in detection (InfraRed Lock-In Thermography, IR-LIT) [27], [28], [29] with the following profits [30], [31]. The influence of either other spectral component of temperature different to the modulation frequency (i.e., DC or other Fourier components) or external noise sources are suppressed.…”