Infrared Sensor on the Basis of Lead-Tin Chalcogenide Multicomponent Solid Solutions

Abstract

Abstract. The linear photovoltaic infrared sensor arrays have been formed on the basis of -layer// (KCl, )/Al(Pb) and Pb/ -layer/ barrier-surface structures, which were obtained by the liquid phase epitaxy and thermal vacuum deposition techniques. At the 80 170170 K, peak wavelength 8 12,2 and cutoff wavelength 8,3 12,8 they had the zero bias resistance area product = 0,18 2,72 , peak quantum efficiency =0,28 0,52 and peak detectivity (0,61 4,51) 10 10 cm·