Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra

Sassella, A.; Borghesi, A.; Geranzani, P.; Borionetti, G.

doi:10.1063/1.124619

Cited by 36 publications

(25 citation statements)

References 18 publications

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“…According to literature the band located at about 1230 cm −1 belongs to plate-like precipitates and the band at about 1090 cm −1 is originated by spherical precipitates. 11,21,[40][41][42] In fact, this can be very well explained based on the effective medium theory as it is shown in many works. 11,[13][14][15]17,21 The simulated absorption bands of the oxygen precipitates show a strong dependence on the morphology and stoichiometry of oxygen precipitates as it is shown in Fig.…”

mentioning

confidence: 97%

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

Kot

Kissinger

Schubert

et al. 2017

ECS J. Solid State Sci. Technol.

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In this work, we look on the current stage of the investigation of the composition of oxygen precipitates obtained with the help of different techniques. Moreover, we present our recent and new investigation of the composition of oxygen precipitates carried out by means of energy dispersive X-ray spectroscopy, electron energy loss spectroscopy, and Fourier transform infrared spectroscopy. The FTIR spectra measured at liquid helium temperature are compared with the spectra simulated on the basis of experimental results obtained by scanning transmission electron microscopy. Oxygen precipitates formed in Czochralski (CZ) silicon wafers in consequence of the thermal treatment were investigated since many decades (see e.g. Ref. 1). The main reason why so much effort was directed toward these defects was the impact which they have on integrated circuits and the properties of the silicon wafer itself. Oxygen precipitates can increase the resistivity of CZ silicon, change the wafer strength and cause warpage of the wafers. [2][3][4] It was also demonstrated that metallic impurities can be effectively trapped at oxygen precipitates in the process of gettering. [5][6][7][8][9] All these features of the oxygen precipitates require the control of precipitation in the production process of silicon devices. However, this cannot be optimally executed if the features of oxygen precipitates like their composition are not fully known. In spite of the wide knowledge about oxygen precipitation, the composition of oxygen precipitates SiO x still remains under ongoing discussion. This is due to the different x values varying from x = 1 to x = 2 which can be found in the literature. [10][11][12][13][14][15][16][17][18][19][20] In 1986, Skiff et al. investigated plate-like precipitates by electron energy loss spectroscopy (EELS) in the near-edge and ionization edge range. 10 The composition which they found was SiO 0.95 . At the beginning of the 90ies, Borghesi et al. modeled Fourier transform infrared spectroscopy (FTIR) spectra by an effective medium approach and concluded that the absorption band of precipitates at 1230 cm −1 can be well reproduced if SiO 1.8 is used.11 However, in 1995 Vanhellemont investigated the growth kinetics of oxygen precipitates based on the solubility and diffusivity of oxygen in silicon using precipitate sizes determined by transmission electron microscopy (TEM). He demonstrated that the precipitated phase is closer to SiO than to SiO 2 .12 The later works, exploiting again FTIR spectroscopy and effective medium theory for the determination of the composition of the oxygen precipitates and carried out by De Gryse et al., confirmed the thesis of Vanhellemont. In the beginning the authors obtained SiO x with x = 1.1-1.2 but in their more recent work they modified the algorithm and concluded that the precipitated phase behaves optically as a mixture of amorphous silicon and amorphous SiO 2 .13,14 Meduňa et al. investigated the composition of oxygen precipitates in silicon wafers characterized by different th...

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confidence: 97%

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

Kot

Kissinger

Schubert

et al. 2017

ECS J. Solid State Sci. Technol.

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“…37 the 1230 cm −1 band is absent. Instead, a band at 1170 cm −1 found in our spectra is related to platelet morphologies [71,75,76,78]. The latter band is considered to originate from a thin oblate spheroidal morphology, which approximates that of a platelet [71,88].…”

Section: Resultsmentioning

confidence: 82%

“…As a result, the presence of carbon forces platelet structures to transform [94] into polyhedral structures, which have generally a larger aspect ratio. Importantly, a band at ~ 1180 cm −1 has been attributed [71,75,76,78] to platelet shaped precipitates.…”

Section: Resultsmentioning

confidence: 99%

“…Initially, we will discuss the origin of each particular band in an attempt A mathematical way to study the behavior of a precipitate is to consider its shape as an ellipsoid with three main axes (a 1 , a 2 , a 3 ). The various ratios of the main axes can properly describe all the possible common shapes of precipitates that is disc, sphere, and needle [72,77,78]. This shape mainly depends on the total free energy F of the structure, that is the sum of the strain and the surface (interfacial) energy [48,79].…”

Section: Resultsmentioning

confidence: 99%

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IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Sgourou

Angeletos

Chroneos

et al. 2017

J Mater Sci: Mater Electron

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“…[25][26][27]. The 1096 cm -1 peak was attributed to the thin oxide film on the sample surface by Sasella et al [28]. Figure 10 IR absorption spectra taken at 10 K and 300 K for S2 after annealing at 1100 °C for 10 h.…”

Section: Positron Annihilation Spectroscopy Studies Of Vacancy Defectmentioning

confidence: 94%

Neutron irradiation defects in Czochralski silicon

Chen

Liu

2009

Phys. Status Solidi (c)

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In this paper the influence of neutron irradiated on the defects and oxygen precipitation in Czochralski silicon were investigated. The vacancy‐oxygen complex (VO, A‐center) is one of the main defects formed in neutron‐irradiated Czochralski silicon (CZ‐Si). In this defect, the oxygen atom shares a vacancy, it is bonded to two silicon neighbours. Annealing of the A‐center in varied neutron‐irradiated CZ‐Si consists of two processes. The first is trapping of VO by interstitial oxygen (Oi) in low‐dose neutron‐irradiated CZ‐Si and the second is capturing of the wandering vacancy by VO, etc, in high‐dose neutron‐irradiated CZ‐Si. With the increase of the irradiation dose, the annealing behavior of the A‐center is changed and the formation of the VO2 is depressed. It is found that V2 and V4 abound in high‐dose irradiated CZ‐Si. With the increase of the annealing temperature the monovacancy type defect is annihilated. The results show that the formation of V4 is enhanced when the annealing temperature ran up to 400‐600 °C and with the FTIR absorption peak at the wave number of 829 cm–1 (VO) disappearing, five absorption peaks appear. It can be concluded that these defect‐impurity complexes prolong the lifetime of positrons. It is found that the high‐dose irradiated greatly accelerates the oxygen precipitation which leads to a sharp decrease of the interstitial oxygen with the increase of the annealing time. At room temperature, the 1107 cm–1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. The bulk micro‐defects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self‐interstitial atoms are created and aggregate with oxygen precipitation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra

Cited by 36 publications

References 18 publications

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Neutron irradiation defects in Czochralski silicon

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