Infrared Response Measurements on Radiation-Damaged Si(Li) Detectors

Sher, A.; Liu, Y. M.; Keery, William J.

doi:10.1109/tns.1972.4326743

Cited by 1 publication

(7 citation statements)

References 7 publications

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“…That the above photovoltage effects are responsible for the diode IRR is supported by the following observations made on germanium diodes [6,9] and confirmed in work with silicon. Firstly, no.…”

Section: Mechanism For Diode Impurity Photovoltage (Irr)supporting

confidence: 57%

“…The IRR spectrum of diode NBS 301 shown in figure 6 is interpreted to confirm the presence of these impurities by virtue of the incompletely resolved peak at 0.37 eV (iron level at 0.34 eV above the valence band) shown in the inset and the "smearing" of the spectrum in the region extending from about 0.64 to 0.59 eV (chromium levels) relative to the spectrum of diode NBS 83-3. Diode NBS 83-6, whose spectrum is also shown in figure 6, was fabricated from a specimen of the same crystal as diode NBS 83-3, but after the lithium diffusion it was stored at room temperature for several months, resulting in lithium precipitation during the storage period.…”

Section: Irr Measurements On Germaniummentioning

confidence: 86%

“…A review of the literature on measurements of energy levels arising from the presence of defects and impurities in semiconductors by photoconductivity and related techniques has suggested that the steady-state photo-EMF, or photovoltage, established when minority carriers are generated by illumination is probably the basic mechanism for the IRR in p-i-n diodes with wide t-regions [6]. Figure 4 illustrates possible models whereby a photovoltage due to light in the impurity region (with energy less than the bandgap energy) can be observed in a diode near liquid nitrogen temperature, 77 K.…”

Section: Mechanism For Diode Impurity Photovoltage (Irr)mentioning

confidence: 99%

“…Diode NBS 83-6, whose spectrum is also shown in figure 6, was fabricated from a specimen of the same crystal as diode NBS 83-3, but after the lithium diffusion it was stored at room temperature for several months, resulting in lithium precipitation during the storage period.…”

Section: Irr Measurements On Germaniummentioning

confidence: 99%

“…Concurrent with the IRR study of germanium, IRR work on silicon nuclear radiation detectors was carried out [6,12].…”

Section: Irr Measurements On Siliconmentioning

confidence: 99%

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Improved infrared response technique for detecting defects and impurities in germanium and silicon d-i-n diodes

Sher¹

1975

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Its major thrusts are the development of carefully evaluated and well documented test procedures and associated technology, for use on production lines and in the exchange of devices and materials, and the dissemination of such information to the electronics community. Application of the output by industry is expected to contribute to higher yields, lower cost, and higher reliability of semiconductor devices.In addition, the improvements in measurement technology will lead to greater economy in government procurement and will provide a basis for controlled improvements in fabrication processes and in essential device characteristics.Cooperation with industrial users and suppliers of semiconductor devices is achieved through NBS participation in standardizing organizations; through direct consultations with device and material suppliers, government agencies, and other users; and through periodically scheduled symposia and workshops.In addition, progress reports are regularly prepared for issuance in the NBS Special Publication 400 sub-series. More detailed reports such as state-of-the-art reviews, literature compilations, and summaries of technical efforts conducted within the Program are Issued as these activities are completed. Reports of this type which are publishe by NBS also appear in the Special Publication 400 sub-series. Announcements of availability of all publications in this sub-series are sent by the Government Printing Office to those who have requested this service. A request form for this purpose may be found at the end of this report. An infrared response (IRR) technique was evaluated for its utility in qualifying germanium for radiation detector use. Because of several improvements in the sensitivity and interpretation of the technique made during the evaluation, it was possible to observe a number of discrete energy levels lying within the forbidden energy gap of germanium which had passed unobserved in previous studies.These levels correlate with the type of defects and vacancies introduced by radiation damage into germanium as measured using such techniques as photoconductivity and Hall effect measurements after irradiation. Furthermore, the improved infrared response measurement method was used to identify impurities, such as copper, gold, and iron, and dislocations resulting from heat treatments in germanium. A major advance was made when it was determined that the IRR spectra could be grouped into five distinct types on the basis of spectral features observed in the energy range from 0.6 to 0.7 eV. One of the spectrum types represented crystals from which good quality detectors could be fabricated; the other four represented crystals that yielded poorer quality detectors due to carrier trapping, or crystals that presented problems such as low lithium drift mobility in detector fabrication. Three of the four spectrum types representative of poor crystal quality could be duplicated by suitably degrading specimens of a good quality crystal. The material and detector characteristics of crysta...

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Section: Mechanism For Diode Impurity Photovoltage (Irr)supporting

confidence: 57%

Section: Irr Measurements On Germaniummentioning

confidence: 86%

Section: Mechanism For Diode Impurity Photovoltage (Irr)mentioning

confidence: 99%

Section: Irr Measurements On Germaniummentioning

confidence: 99%

“…Concurrent with the IRR study of germanium, IRR work on silicon nuclear radiation detectors was carried out [6,12].…”

Section: Irr Measurements On Siliconmentioning

confidence: 99%