Infrared Reflection Spectroscopy of Ion-Implanted n-Hgo.8Cdo.2Te

Abstract

It is shown that the IR reflection spectroscopy is an efficient contactless method of determining electrical and optical parameters of thin surface layers created by ion‐implantation. The possibilities of the method are demonstrated using an example of Mg+‐implanted n‐Hgo.8Cdo.2Te. By extending the classical dispersion analysis to a layer model a reasonable fit is achieved between the calculated and measured reflectivity spectra of the ion‐implanted samples. This method allows to find the specific semiconductor characteristics of the layer such as a sheet carrier concentration, its relaxation time, and mobility. The reflection data analysis also permits to obtain the energy spectrum of the impurity defect states in the gap.