Infrared Radiation Image Sensor with Function of Vacuum Pressure Detection

Ishii, Koichi; Funaki, Hideyuki; Yagi, Hitoshi; Fujiwara, Ikuo; Suzuki, Koji; Honda, Hisashi

doi:10.1541/ieejsmas.131.70

Cited by 1 publication

(3 citation statements)

References 10 publications

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“…In the case of IR image sensors, the CDS technique is utilized to compensate the boundary temperature, too [8][9][10]. We utilize TBs near the detection pixels instead of OBs, which are general reference pixels in a CMOS image sensor [13].…”

Section: Structure Of An Ir Image Sensor Utilizing a Soi Wafermentioning

confidence: 99%

“…Figure 2 shows the fabrication process flow of our IR image sensor. p-n junctions for pixels and transistors for driving and read-out circuits were formed into a structural silicon layer of a SOI wafer utilizing 8 inch CMOS technology [8][9][10]. Layers of poly-silicon, SiO 2 , silicon nitride, and metal were structured to form gates of transistors, capacitors, and electrical connections of them.…”

Section: Fabrication Of the Ir Image Sensormentioning

confidence: 99%

“…The specialized structures were etch-stop structures beneath the read-out lines and/or release halls to the central part of diode detector (sensor pixel) structures, which made the fabrication complicated. We have reported the uncooled IR image sensors with silicon single crystal series p-n junctions which were released by the anisotropic wet etching process [8][9][10]. In the meantime, CDS (correlated double sampling) techniques are utilized generally in CMOS image sensors for lowering internal noises [11,12].…”

Section: Introductionmentioning

confidence: 99%

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A SOI-based CMOS-MEMS IR image sensor with partially released reference pixels

Kwon

Suzuki

Ishii

et al. 2011

J. Micromech. Microeng.

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We have developed a 22 µm pitch and 320 × 240 pixel uncooled IR (infrared) image sensor. For IR detection, we utilized single crystal silicon series p–n junctions, which were fabricated on a SOI (silicon on insulator) wafer utilizing 8 inch CMOS technology and MEMS processes. The p–n junctions were passivated with buried and laminated oxide layers from wet crystalline etching of the silicon substrate. The oxide layers were also utilized to absorb the IR radiation and to form supporting beams. The partially released pixels were utilized as thermal black pixels (TBs) instead of optical black pixels (OBs) for correlated double sampling. The IR image sensor utilizing TBs obtained a thermal image of the human body stably without the smearing phenomenon.

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Section: Structure Of An Ir Image Sensor Utilizing a Soi Wafermentioning

confidence: 99%

Section: Fabrication Of the Ir Image Sensormentioning

confidence: 99%