1959
DOI: 10.1103/physrev.113.127
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Infrared Properties of Hexagonal Silicon Carbide

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Cited by 449 publications
(200 citation statements)
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“…That is indeed the case, as shown in Fig. 2(c), which shows the force when the substrate has very high losses (ε" = 0.8, high compared to practical ENZ materials, e.g., SiC is a natural ENZ material 23 at around 29 THz where it has ε" ≈ 0.1). We have deliberately chosen an exaggerated imaginary value of ε" = 0.8 to illustrate our point.…”
Section: As a Function Of The Height Over The Substrate (Vertical Aximentioning
confidence: 57%
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“…That is indeed the case, as shown in Fig. 2(c), which shows the force when the substrate has very high losses (ε" = 0.8, high compared to practical ENZ materials, e.g., SiC is a natural ENZ material 23 at around 29 THz where it has ε" ≈ 0.1). We have deliberately chosen an exaggerated imaginary value of ε" = 0.8 to illustrate our point.…”
Section: As a Function Of The Height Over The Substrate (Vertical Aximentioning
confidence: 57%
“…For the Lorentz model of SiC given in Ref 23 , a relatively wide repulsive force fractional bandwidth of 6% around the 29 THz ENZ frequency is obtained. This wide bandwidth is thanks to the broad range of values around ENZ that result in a repulsive force, which resembles conventional repulsion of diamagnetic materials, with permeability  lower than 1, inside an inhomogeneous magnetic field.…”
Section: As a Function Of The Height Over The Substrate (Vertical Aximentioning
confidence: 99%
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“…89,90 ε ∞ sets the values at very large energies, and Γ describes the losses in the material. For SiC we use 89,91,92 ω l = 969 cm −1 , ω t = 793 cm −1 , ε ∞ = 6.7, and Γ = 4.76 cm −1 . The frequencies where phononic antenna modes can occur are limited to the window between ω l and ω t , where the real part of ε SiC is negative.…”
Section: ■ Phononic Gap-antennas: Morphology Effects In the Infraredmentioning
confidence: 99%
“…4: The PPs are placed symmetrically at fixed distance h = 10 −7 m at opposite sides of the sphere's surface, so that their mutual distance is d = 2(R + h). The radius R is varied from 10 −9 m up to 3×10 −5 m. We evaluate expression (17) with temperature T 1 = 300 K, and let the PPs be made of SiC, using the following dielectric function [58]:…”
Section: Heat Transfer In the Presence Of A Sphere Of Arbitrary Sizementioning
confidence: 99%