Infrared phototransistor using capacitively coupled two-dimensional electron gas layers

An, Zhenghua; Chen, Jeng-Chung; Ueda, Taisei; Komiyama, S.; Hirakawa, Kazuhiko

doi:10.1063/1.1920425

Cited by 55 publications

(36 citation statements)

References 10 publications

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“…The functionality of this single quantum well photodetector has been demonstrated previously [16] and is very promising for high-performance photo-detection (ultimately counting individual photons despite small photon energy in the infrared/terahertz region) [17]. However, this device currently suffers from low photo-coupling efficiency thereby needing optimization of the plasmonic couplers.…”

Section: Structure and Simulation Methodsmentioning

confidence: 89%

“…The quantum well is responsible for the photo absorption (and in turn, photo-detection) through the inter-subband transitions of electrons. The plasmonic coupler couples far-field light converting it to transverse-magnetic (TM) electromagnetic wave required by the quantum well absorption [16,18]. In other words, the coupler maximizes the vertical electric field amplitude (|E z |) at the quantum well location under far-field front illumination [18].…”

Section: Structure and Simulation Methodsmentioning

confidence: 99%

“…1, the cross-hole array has a period of P, length of L, and width of W. The gold layer thickness is fixed at t 1 =100 nm in this work. The dielectric constant of Au is assumed to follow a standard Drude model with the following parameters: ε ∞ =1, ω p =1.365×10 16 rad/s, and γ= 5.78×10 13 Hz. The 10-nm-thick QW layer is located 100 nm away from the Au/GaAs interface, and the associated intersubband transition occurs at a typical frequency f res =20 THz (i.e., ΔE=82.8 meV).…”

Section: Structure and Simulation Methodsmentioning

confidence: 99%

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Optimization of Optoelectronic Plasmonic Structures

Wang

et al. 2011

Plasmonics

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We discuss the interplay between surface plasmon polaritons (SPPs) and localized shape resonances (LSRs) in a plasmonic structure working as a photocoupler for a GaAs quantum well photodetector. For a targeted electronic inter-subband transition inside the quantum well, maximum photon absorption is found by compromising two effects: the mode overlapping with incident light and the lifetime of the resonant photons. Under the optimal conditions, the LSR mediates the coupling between the incident light and plasmonic structure while the SPP provides long-lived resonance which is limited ultimately by metal loss. The present work provides insight to the design of plasmonic photo-couplers in semiconductor optoelectronic applications.

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Section: Structure and Simulation Methodsmentioning

confidence: 89%

Section: Structure and Simulation Methodsmentioning

confidence: 99%

Section: Structure and Simulation Methodsmentioning

confidence: 99%

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Optimization of Optoelectronic Plasmonic Structures

Wang

et al. 2011

Plasmonics

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“…Recently, charge-sensitive infrared phototransistors (CSIPs) have been developed for detecting MIR 14.7 μm photons (An et al 2005;Ueda et al 2008). The detectors utilize a double-quantum-well (DQW) structure as shown in Figure 1 (An et al, 2005), where an electron in the upper QW tunnels out of the QW [Figure 1(d)] under photoexcitation and moves to the lower QW (An et al, 2005).…”

Section: Introductionmentioning

confidence: 99%

“…The detectors utilize a double-quantum-well (DQW) structure as shown in Figure 1 (An et al, 2005), where an electron in the upper QW tunnels out of the QW [Figure 1(d)] under photoexcitation and moves to the lower QW (An et al, 2005). The device is fabricated in a GaAs/AlGaAs modulation doped heterostructure crystal containing two layers of two dimensional electron gas (2DEG) by molecular-beam expitaxy as shown in Figure 1 depletes the upper QW in the regions below the gate while leaving the 2DEG in the lower QW.…”

Section: Introductionmentioning

confidence: 99%

CSIP – A Novel Photon-Counting Detector Applicable for the SPICA Far-Infrared Instrument

Doi

Wang

Ueda

et al. 2009

SPICA Joint European/Japanese Workshop

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We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal amplification by another QW as a channel with very high gain, which provides us with extremely high responsivity (10 4 -10 6 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10 −19 W/ √ Hz with the quantum efficiency of ∼ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 10 6 , low output impedance of 10 3 -10 4 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 -60 μm waveband, which is a gap uncovered with presently available photoconductors.

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Lithographic quantum dot for sensitive infrared photon detection

Ueda

Komiyama

et al. 2009

Phys. Status Solidi (c)

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Semiconductor quantum dots (QDs) with discrete energy levels provide a promising solution for infrared photon detection. A lithographically defined QD with split conduction subbands has been utilized as a photo‐active floating gate in a phototransistor structure. Electrons inside the QD are excited by incident infrared photons via intersubband transition and thereby tunnel out of the QD, lowering its electrostatic potential. As a consequence, photo‐signal arises as an electrical current increment in the phototransistor channel. It has been found that this though simple scheme exhibits a high sensitivity which is sufficient for detecting individual infrared photons (λ ∼ 14 μm).With continuous detection operation, more electrons are driven out of the QD. Eventually, the system approaches saturation due to over‐bended energy band profiles, therefore degrading the photo‐sensitivity. To alleviate this photo‐saturation effect, the QD electrostatic potential is controlled through a tuneable electrostatic potential barrier. Under illumination, the interplay between photo‐excitation and the potential barrier justifies the QD charge states, electrostatic potential and hence the channel current. It is found that, when the QD potential is externally lifted‐up, the device photo‐response can be enhanced clearly. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Infrared phototransistor using capacitively coupled two-dimensional electron gas layers

Cited by 55 publications

References 10 publications

Optimization of Optoelectronic Plasmonic Structures

Optimization of Optoelectronic Plasmonic Structures

CSIP – A Novel Photon-Counting Detector Applicable for the SPICA Far-Infrared Instrument

Lithographic quantum dot for sensitive infrared photon detection

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