Infrared photoconductivity in p-SnS

Chamberlain, J.M.; Merdan, M

doi:10.1088/0022-3719/10/19/004

Cited by 35 publications

(31 citation statements)

References 5 publications

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“…26 The projector-augmented wave (PAW) 27 potentials are used to describe the interaction between electrons and ions. 30,31 Recently, a modication to the semilocal Becke-Johnson potential 32 was proposed. In fact, we also considered the HSE06 (ref.…”

Section: Computational Detailsmentioning

confidence: 99%

Enhanced thermoelectric performance of layered SnS crystals: the synergetic effect of temperature and carrier concentration

Sun

et al. 2015

RSC Adv.

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We present a detailed theoretical study of the SnS compound, which has not been investigated in depth to date, concerning its crystal structure, electronic structure and thermoelectric property. The results of this study show that pure SnS is not a good thermoelectric material but that its ZT can be increased by adjusting both the temperature and carrier concentration. Further, the optimal temperatures and carrier concentrations for producing the peak ZT are identified. The peak ZT is always below unity in the lowtemperature Pnma phase; conversely, when the crystal undergoes a displacive phase transition at 878 K, the peak ZT is enhanced to 1.61 AE 0.02 at 1080 K. Additionally, the average ZT in the Cmcm phase (e.g., approximately 1.3) is significantly higher than that in the Pnma phase (e.g., 0.31 AE 0.05). Therefore, the optimally doped SnS material may be highly efficient in its thermal-to-electrical energy conversion at high temperatures. We attribute the remarkable high ZT of doped SnS to the high sensitivity of the electrical conductivity to the carrier concentration. The results of this study describe a simple and viable strategy to optimize the ZT value of the SnS compound using the synergetic tuning of temperature and carrier concentration.

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Section: Computational Detailsmentioning

confidence: 99%

Enhanced thermoelectric performance of layered SnS crystals: the synergetic effect of temperature and carrier concentration

Sun

et al. 2015

RSC Adv.

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“…This compound has an orthorhombic structure, as studied by Hoffman in 1935, and contains layers of Sn and S atoms tightly bound together while the bonding between layers is of the weak van der Waals type [1]. Many investigations on the electrical, optical and photoconductivity properties of SnS single crystals have been carried out up to now [2][3][4][5][6]. It has been found that SnS crystals exhibit photoconductivity for wavelengths less than ∼1.2 µm and the hole mobility is 90 cm 2 V −1 s −1 perpendicular to the c-axis.…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing on physical properties of evaporated SnS films

Devika¹,

Reddy²,

Ramesh³

et al. 2006

Semicond. Sci. Technol.

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The effect of annealing on the composition, crystal structure, surface features and electro-optical properties of tin mono-sulfide (SnS) films, deposited by thermal evaporation at 300 • C, has been studied. Elemental analysis of the films shows sulfur deficiency, which increases at higher annealing temperatures (T a). The SnS structure in the as-deposited and annealed films remains orthorhombic. With an increase in T a , the grain size and the surface roughness are reduced. The electrical resistivity also decreases with increasing T a. The variation of activation energy and optical parameters with T a has been explained by taking into account the degree of preferred orientation of the grains. The films annealed at 100 • C show some unusual features compared to those annealed at other temperatures.

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“…As a result, Sn atom can form sp 2 bonding with a lone pair of valence electrons. 15 In the doped system Sn 17 Se 18 X Sn (X=Ga, In, As, Sb), X dopant atom is neighborhood with Sn in the periodic table of elements, which can avoid of lattice distortion, giving rise to the impurity states always appear either above valence band or below conduction band, or the middle of band gap. To explore the underlying electronic and magnetic properties of the doped monolayer Sn 17 Se 18 X Sn (X=Ga, In, As, Sb).…”

Section: Resultsmentioning

confidence: 99%

“…12,13 For bulk Tin selenium (SnSe), it has two most common crystal structures: one is cubic NaCl (rock salt) and the other is orthorhombic GeS structure with an orthorhombic Pnma space group at room temperature. 14,15 Furthermore, bulk SnSe is an important double layered binary IV-VI semiconductor with structural orthorhombic symmetry and weak van der Waals force between double layers. In addition, bulk SnSe has both a direct band gap of 1.30 eV and an indirect band gap of 0.90 eV, just falling into the optimum band gap for solar cells.…”

Section: Introductionmentioning

confidence: 99%

Electronic and magnetic properties of dopant atoms in SnSe monolayer: a first-principles study

Wang,

Yu,

et al. 2015

Preprint

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SnSe monolayer with orthorhombic Pnma GeS structure is an important twodimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the electronic and magnetic properties of X (X = Ga, In, As, Sb) atoms doped SnSe monolayer. The calculated electronic structures show that Ga-doped system maintains semiconducting property while In-doped SnSe monolayer is half-metal. The As-and Sb-doped SnSe systems present the characteristics of n-type semiconductor. Moreover, all considered substitutional doping cases induce magnetic ground states with the magnetic moment of 1µB. In addition, the calculated formation energies also show that four types of doped systems are thermodynamic stable. These results provide a new route for the potential applications of doped SnSe monolayer in 2D photoelectronic and magnetic semiconductor devices.

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Infrared photoconductivity in p-SnS

Cited by 35 publications

References 5 publications

Enhanced thermoelectric performance of layered SnS crystals: the synergetic effect of temperature and carrier concentration

Enhanced thermoelectric performance of layered SnS crystals: the synergetic effect of temperature and carrier concentration

Influence of annealing on physical properties of evaporated SnS films

Electronic and magnetic properties of dopant atoms in SnSe monolayer: a first-principles study

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