Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures

Zhou, Qiaoying; Chen, Jiayu; Pattada, B.; Manasreh, M. O.; Xiu, Faxian; Puntigan, Steve; He, Lei; Konakanchi, Ramaiah; Morkoç̌, H.

doi:10.1063/1.1577809

Cited by 15 publications

(8 citation statements)

References 20 publications

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“…8,9 We observed that the PL intensity of quantum wells without a capping layer was higher than that of p-GaN capped quantum-well structures because there is intraband absorption in the capped layer. 10 The PL quantum efficiency and full width at half maximum of the QW peak for the LED structure were found to be 0.05% at room temperature and 62 meV at 10 K. The blue emission peak intensity versus inverse temperature gave the activation energy of 43 meV, indicating the localization of the carriers in the structure. The activation energy was increased with increasing In composition, resulting in deep localization energies of excitons due to potential fluctuations.…”

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confidence: 90%

Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition

Konakanchi

Chang

et al. 2004

Applied Physics Letters

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The structural, surface morphology, and the temperature dependence photoluminescence of InGaN(3 nm)/GaN(7 nm) 5 period multi-quantum-well blue-light-emitting diode (LED) structures grown by metal organic chemical vapor deposition (MOCVD) have been studied. Quantum dot-like structures and strain contrast evident by black lumps were observed in the quantum wells using high-resolution transmission electron microscopy (HRTEM) analysis. Double-crystal high-resolution x-ray diffraction (HRXRD) spectra of blue LED were simulated using kinematical theory method, to obtain composition, and period thickness of well and barrier. The “S” shape character shift as red–blue–redshift of the quantum-well emission line, i.e., blue emission peak 2.667 eV at 10 K, was observed with variation of temperature in the photoluminescence (PL) spectra. The shift is assigned to the potential fluctuations due to alloy inhomogeneous distribution in the quantum wells. The In composition in the quantum wells obtained by two independent techniques, namely HRXRD and PL, was 8% and 19%, respectively. The reason for this large difference in composition is explained in this letter.

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confidence: 90%

Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition

Konakanchi

Chang

et al. 2004

Applied Physics Letters

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“…These devices are expected to play a particularly important role in applications such as ultra-broadband signal processing and all-optical networking in fiber-optic communication systems, for which near-infrared operation wavelengths near 1.55 μm are required. Material systems with sufficiently large conduction-band offsets to accommodate ISB transitions at these relatively short wavelengths include InGaAs/AlAsSb [1], (CdS/ZnSe)/BeTe [2], and GaN/Al(Ga)N QWs [3][4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…Specific advantages of III-nitride semiconductors for ISB alloptical switching include their highly polar nature, which results in a very strong electron-LO phonon coupling and hence particularly fast ISB relaxation lifetimes, and their very wide bandgap, which precludes interband two-photon absorption of near-infrared light. Recently ISB absorption near 1.55 μm has been measured in various GaN/Al(Ga)N QW systems [3][4][5][6][7][8][9], followed by the demonstration of photodetection [10], all-optical switching by crossabsorption saturation [11][12], and optically pumped light emission [13] with similar structures. In addition, several pump-probe measurements in both unprocessed and waveguide samples have fully established the particularly fast nature of ISB relaxation in GaN/Al(Ga)N QWs, with measured lifetimes in the range 140-500 fs [6,7,11,12].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells

Li¹,

Bhattacharyya²,

Thomidis³

et al. 2007

Opt. Express

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We present the design, fabrication, and characterization of III-nitride quantum-well waveguides optimized for nonlinear-optical switching via intersubband transitions. A dielectric structure consisting of an AlN lower cladding and a GaN cap layer allows minimizing the propagation losses while maintaining a large modal overlap with the quantum-well active layer. A strong nonlinear saturation of the intersubband absorption near 1.55 mum is demonstrated at record low input powers for these materials; in particular, a 3-dB saturation pulse energy of less than 10 pJ with 240-fs pulses is measured. Combined with the well established sub-picosecond recovery lifetimes of intersubband absorption in III-nitride quantum wells, these results are very promising for all-optical switching applications in future ultrafast fiber-optic communication networks.

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“…Initial efforts in the study of ISB transitions in nitride semiconductors have focused on measuring the infrared transmission spectra of various GaN/Al(Ga)N n-doped multiple-QW samples [283][284][285][286][287][288]. Pronounced ISB absorption peaks were reported in these studies, centered at near-infrared wavelengths that could not be accessed using As-based materials.…”

Section: Infrared Device Applicationsmentioning

confidence: 99%

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2017

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This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

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Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures

Cited by 15 publications

References 20 publications

Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition

Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

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